BU406 STMicroelectronics, BU406 Datasheet

TRANSISTOR NPN SW TO-220

BU406

Manufacturer Part Number
BU406
Description
TRANSISTOR NPN SW TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BU406

Transistor Type
NPN
Current - Collector (ic) (max)
7A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
1V @ 500mA, 5A
Current - Collector Cutoff (max)
5mA
Power - Max
60W
Frequency - Transition
10MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Other names
497-7195-5
BU406ST

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APPLICATIONS:
DESCRIPTION
The BU406 is a silicon Epitaxial Planar NPN
transistor in Jedec TO-220 plastic package.
It is a fast switching device for use in horizontal
deflection output stages of large screens MTV
receivers with 110
ABSOLUTE MAXIMUM RATINGS
February 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
VERY HIGH SWITCHING SPEED
HORIZONTAL DEFLECTION FOR
MONOCHROME TV
V
V
V
V
T
P
I
I
CBO
CEO
CEV
EBO
I
CM
CM
T
I
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (repetitive)
Collector Peak Current (t
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
o
CRT.
SILICON NPN SWITCHING TRANSISTOR
Parameter
c
C
25
p
E
= 0)
< 10 ms)
= 0)
B
o
BE
C
= 0)
= -1.5 V)
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
400
400
200
150
10
15
60
TO-220
6
7
4
1
2
3
BU406
Unit
o
o
W
V
V
V
V
A
A
A
A
C
C
1/4

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BU406 Summary of contents

Page 1

... SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV DESCRIPTION The BU406 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package fast switching device for use in horizontal deflection output stages of large screens MTV o receivers with 110 CRT. ...

Page 2

... BU406 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-emitter CE(sat) Saturation Voltage V Base-emitter BE(sat) Saturation Voltage f Transition-Frequency T t Turn-off Time off I Second Breakdown s/b Collector Current Pulsed: Pulse duration = 300 s, duty cycle 1 ...

Page 3

... BU406 MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 P011CI 3/4 ...

Page 4

... BU406 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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