MJH11022G ON Semiconductor, MJH11022G Datasheet - Page 3

• Manufacturer Part Number: MJH11022G
• Description: TRANS DARL NPN 15A 250V TO218
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of MJH11022G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 4V @ 150mA, 15A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 10A, 5V
• Power - Max: 150W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 250 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 100, 400
• Minimum Operating Temperature: - 65 C
• Current, Gain: 100
• Current, Input: 0.5 A
• Current, Output: 15 A
• Package Type: SOT-93 (TO-218)
• Polarity: NPN
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Input: 5 V
• Voltage, Output: 250 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJH11022GOS

5.0
2.0
1.0
0.5
0.2
30
20
10
0.07
0.05
0.03
0.02
0.01
0
R
D
1.0
0.7
0.5
0.3
0.2
0.1
B
1
0.01
1N5825 used above I
MSD6100 used below I
, must be fast recovery types, e.g.:
& R
T
C
Figure 4. Maximum Rated Forward Bias
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
C
= 25°C SINGLE PULSE
varied to obtain desired current levels
0.02
V
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CE
Safe Operating Area (FBSOA)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.03
2.0
3.0
0.05
0.01
B
5.0
0.5 ms
≈ 100 mA
B
1.0 ms
≈ 100 mA
0.1
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
5.0 ms
10
0.2
20
t
Duty Cycle = 1.0%
r
, t
30
f
0.3
≤ 10 ns
dc
Figure 2. Switching Times Test Circuit
50
0.5
100
0.1 ms
Figure 3. Thermal Response
150
http://onsemi.com
1.0
250
APPROX
APPROX
- 8.0 V
+12 V
V2
V1
2.0
For NPN test circuit, reverse diode and voltage polarities.
t, TIME (ms)
0
3
3.0
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
J(pk)
qJC
qJC
There are two limitations on the power handling ability of
The data of Figure 4 is based on T
5.0
(t) = r(t) R
= 0.83°C/W MAX
- T
C
= P
10
25 ms
(pk)
qJC
1
R
J(pk)
qJC
20
(t)
51
may be calculated from the data in
For t
and V2 = 0
30
R
D
+ 4.0 V
B
d
1
and t
50
P
r
, D
(pk)
DUTY CYCLE, D = t
100
1
is disconnected
t
1
TUT
t
J(pk)
2
200
R
100 V
C
V
CC
300
= 150_C; T
1
SCOPE
/t
500
2
C
− V
J(pk)
1000
C
CE
is