MJH11022G ON Semiconductor, MJH11022G Datasheet

MJH11022G

Manufacturer Part Number

MJH11022G

Description

TRANS DARL NPN 15A 250V TO218

Manufacturer

ON Semiconductor

Type

Power, Switchr

Datasheets

1.MJH11017G.pdf (7 pages)

2.MJH11022G.pdf (4 pages)

Specifications of MJH11022G

Transistor Type

NPN - Darlington

Current - Collector (ic) (max)

15A

Voltage - Collector Emitter Breakdown (max)

250V

Vce Saturation (max) @ Ib, Ic

4V @ 150mA, 15A

Current - Collector Cutoff (max)

1mA

Dc Current Gain (hfe) (min) @ Ic, Vce

400 @ 10A, 5V

Power - Max

150W

Frequency - Transition

3MHz

Mounting Type

Through Hole

Package / Case

SOT-93, TO-218 (Straight Leads)

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

250 V

Emitter- Base Voltage Vebo

5 V

Collector- Base Voltage Vcbo

250 V

Maximum Dc Collector Current

15 A

Power Dissipation

150 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

15 A

Dc Collector/base Gain Hfe Min

100, 400

Minimum Operating Temperature

- 65 C

Current, Gain

100

Current, Input

0.5 A

Current, Output

15 A

Package Type

SOT-93 (TO-218)

Polarity

NPN

Primary Type

Voltage, Collector To Emitter, Saturation

4 V

Voltage, Input

5 V

Voltage, Output

250 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJH11022GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJH11022G

Manufacturer:

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJH11022G

Manufacturer:

MOTOROLA

Quantity:

10 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJH11022G

Manufacturer:

ON/安森美

Quantity:

20 000

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Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î

MJH11017, MJH11019,

MJH11021 (PNP)

MJH11018, MJH11020,

MJH11022 (NPN)

Complementary Darlington

Silicon Power Transistors

low frequency switching and motor control applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

*For additional information on our Pb−Free strategy and soldering details, please

September, 2008 − Rev. 7

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation @ T

Derate above 25_C

Operating and Storage Junction Temperature

Range

Thermal Resistance, Junction−to−Case

These devices are designed for use as general purpose amplifiers,

High DC Current Gain @ 10 Adc — h

Collector−Emitter Sustaining Voltage

Low Collector−Emitter Saturation Voltage

Monolithic Construction

Pb−Free Packages are Available*

CEO(sus)

CE(sat)

Characteristic

Rating

− Continuous

− Peak (Note 1)

= 1.2 V (Typ) @ I

= 200 Vdc (Min) — MJH11020, 19

= 250 Vdc (Min) — MJH11022, 21

= 1.8 V (Typ) @ I

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

= 150 Vdc (Min) — MJH11018, 17

Preferred Device

= 25_C

= 5.0 A

= 10 A

Î Î Î

Symbol

= 400 Min (All Types)

CEO

, T

qJC

stg

Î Î Î

–65 to

+150

Max

0.83

150

200

250

150

200

250

150

5.0

0.5

1.2

Î Î Î

W/_C

_C/W

Unit

Vdc

Adc

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

BASE

COMPLEMENTARY SILICON

150−250 VOLTS, 150 WATTS

15 AMPERE DARLINGTON

MJH110xx = Device Code

POWER TRANSISTORS

ORDERING INFORMATION

COLLECTOR 2

EMITTER 3

MJH11018

MJH11020

MJH11022

NPN

http://onsemi.com

= Assembly Location

= Year

= Work Week

= Pb−Free Package

CASE 340D

(TO−218)

xx = 17, 19, 21, 18, 20, 22

STYLE 1

SOT−93

Publication Order Number:

BASE

COLLECTOR 2

EMITTER 3

MJH11017

MJH11019

MJH11021

MARKING

DIAGRAM

MJH110xx

MJH11017/D

PNP

AYWWG

Related parts for MJH11022G

MJH11022G Summary of contents

Page 1

... Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 September, 2008 − ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 3

R & R varied to obtain desired current levels must be fast recovery types, e.g.: 1 1N5825 used above I ≈ 100 mA B MSD6100 used below I ≈ 100 ...

Page 4

L = 200 mH ≥ 100° 5.0 V BE(off DUTY CYCLE = 10% 10 MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 0 ...

Page 5

PNP 4 25°C 4.0 J 3.5 3.0 2.5 2.0 1.5 1.0 1.0 2.0 3.0 5 100 I , BASE CURRENT (mA) B PNP 4.0 3 25°C J 3.0 2 ...

Page 6

... ORDERING INFORMATION Device Order Number MJH11017 MJH11017G MJH11018 MJH11018G MJH11019 MJH11019G MJH11020 MJH11020G MJH11021 MJH11021G MJH11022 MJH11022G Package Type SOT−93 SOT−93 (Pb−Free) SOT−93 SOT−93 (Pb−Free) SOT−93 SOT−93 (Pb−Free) SOT−93 SOT−93 (Pb−Free) SOT−93 SOT− ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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