MJL3281AG ON Semiconductor, MJL3281AG Datasheet - Page 4

• Manufacturer Part Number: MJL3281AG
• Description: TRANS BIPO NPN 15A 200V TO264
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJL3281AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 260V
• Vce Saturation (max) @ Ib, Ic: 3V @ 1A, 10A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 5A, 5V
• Power - Max: 200W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 200V
• Collector-base Voltage(max): 230V
• Emitter-base Voltage (max): 7V
• Collector Current (dc) (max): 15A
• Power Dissipation: 200W
• Frequency (max): 30MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-3BPL
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 200 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 15 A
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 60
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 15 A
• Current, Gain: 45
• Frequency: 30 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.625 °C/W
• Voltage, Breakdown, Collector To Emitter: 260 V
• Voltage, Collector To Base: 260 V
• Voltage, Collector To Emitter: 260 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MJL3281AGOS

10000
1000
100
1.0
0.1
100
10
1.0
0.1
10
0.1
0.1
1.0
T
f
test
Figure 11. Active Region Safe Operating Area
T
J
Figure 9. MJL1302A Typical Capacitance
J
= 25°C
= 25°C
= 1 MHz
Figure 7. Typical Base−Emitter Voltage
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
V
C
R
, COLLECTOR CURRENT (AMPS)
, REVERSE VOLTAGE (VOLTS)
1.0
1.0
10
PNP MJL1302A
PNP MJL1302A
V
CE
= 5 V (DASHED)
1 sec
C
ob
250 ms
MJL3281A (NPN) MJL1302A (PNP)
C
10 ms
ib
10
10
100
V
CE
TYPICAL CHARACTERISTICS
= 20 V (SOLID)
50 ms
http://onsemi.com
100
100
1000
4
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
10000
There are two limitations on the power handling ability of
The data of Figure 11 is based on T
1000
100
1.0
0.1
10
0.1
0.1
T
f
test
J
Figure 10. MJL3281A Typical Capacitance
T
= 25°C
J
= 1 MHz
Figure 8. Typical Base−Emitter Voltage
= 25°C
V
I
C
R
, COLLECTOR CURRENT (AMPS)
, REVERSE VOLTAGE (VOLTS)
1.0
1.0
NPN MJL3281A
NPN MJL3281A
V
CE
C
ob
= 5 V (DASHED)
C
J(pk)
ib
10
= 150°C; T
10
V
CE
= 20 V (SOLID)
C
C
− V
is vari-
100
CE
100