MJL3281AG ON Semiconductor, MJL3281AG Datasheet - Page 2
MJL3281AG
Manufacturer Part Number
MJL3281AG
Description
TRANS BIPO NPN 15A 200V TO264
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of MJL3281AG
Transistor Type
NPN
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
260V
Vce Saturation (max) @ Ib, Ic
3V @ 1A, 10A
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 5A, 5V
Power - Max
200W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-3BPL
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage(max)
230V
Emitter-base Voltage (max)
7V
Collector Current (dc) (max)
15A
Power Dissipation
200W
Frequency (max)
30MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-3BPL
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
200 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
15 A
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
15 A
Dc Collector/base Gain Hfe Min
60
Maximum Operating Frequency
30 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
15 A
Current, Gain
45
Frequency
30 MHz
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
0.625 °C/W
Voltage, Breakdown, Collector To Emitter
260 V
Voltage, Collector To Base
260 V
Voltage, Collector To Emitter
260 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
7 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MJL3281AGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJL3281AG
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown Collector with Base Forward Biased
DC Current Gain
Collector−Emitter Saturation Voltage
Current−Gain − Bandwidth Product
Output Capacitance
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
CB
EB
CE
CE
CB
= 100 mAdc, I
= 500 mAdc, V
= 1 Adc, V
= 3 Adc, V
= 5 Adc, V
= 8 Adc, V
= 10 Adc, I
= 1 Adc, V
= 5 Vdc, I
= 260 Vdc, I
= 50 Vdc, t = 1 s (non−repetitive)
= 100 Vdc, t = 1 s (non−repetitive)
= 10 Vdc, I
CE
CE
CE
CE
CE
B
C
= 1 Adc)
E
= 0)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc, f
B
E
CE
= 0, f
= 0)
= 0)
= 5 Vdc)
test
test
= 1 MHz)
Characteristic
= 1 MHz)
(T
MJL3281A (NPN) MJL1302A (PNP)
C
= 25°C unless otherwise noted)
http://onsemi.com
2
V
Symbol
V
CEO(sus)
CE(sat)
I
I
h
C
CBO
EBO
I
S/b
f
FE
T
ob
Min
260
75
75
75
75
45
30
−
−
4
1
−
−
Max
150
150
150
150
600
50
−
5
−
−
−
3
−
μAdc
μAdc
MHz
Unit
Vdc
Adc
Vdc
pF