BU406G ON Semiconductor, BU406G Datasheet

BU406G

Manufacturer Part Number

BU406G

Description

TRANS NPN PWR 7A 200V TO220AB

Manufacturer

ON Semiconductor

Datasheet

1.BU406G.pdf (3 pages)

Specifications of BU406G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

200V

Vce Saturation (max) @ Ib, Ic

1V @ 500mA, 5A

Current - Collector Cutoff (max)

5mA

Power - Max

60W

Frequency - Transition

10MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

200 V

Emitter- Base Voltage Vebo

6 V

Maximum Dc Collector Current

7 A

Power Dissipation

60 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

7 A

Maximum Operating Frequency

10 MHz

Minimum Operating Temperature

- 65 C

05+

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Dc Current Gain (hfe) (min) @ Ic, Vce

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BU406GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BU406G

Manufacturer:

ON Semiconductor

Quantity:

850

Current page: 1 of 3
Download datasheet (122Kb)

BU406, BU407

NPN Power Transistors

deflection output stages of TV’s and CRT’s.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

May, 2009 − Rev. 8

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Base Current

Total Device Dissipation @ T

Operating and Storage Junction

Temperature Storage

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes1/8″ from Case for 5 Seconds

These devices are high voltage, high speed transistors for horizontal

High Voltage: V

Fast Switching Speed: t

Low Saturation Voltage: V

Pb−Free Packages are Available*

Derate above 25°C

Characteristics

Rating

− Peak Repetitive

− Peak (10 ms)

CEV

= 330 or 400 V

= 750 ns (max)

= 25_C

CE(sat)

BU406

BU407

BU406

BU407

BU406

BU407

= 1 V (max) @ 5 A

Symbol

CEO

CBO

EBO

, T

CEV

qJC

qJA

stg

−65 to 150

Value

0.48

Max

2.08

200

150

400

330

400

330

260

W/_C

_C/W

Unit

Vdc

Adc

BU406

BU406G

BU407

BU407G

Device

7 AMPERES − 60 WATTS

POWER TRANSISTORS

BU40x = Specific Device Code

150 AND 200 VOLTS

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

NPN SILICON

TO−220AB

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

x = 6 or 7

AY WW

BU40xG

Publication Order Number:

CASE 221A−09

TO−220AB

STYLE 1

50 Units / Rail

Shipping

BU406/D

Related parts for BU406G

BU406G Summary of contents

Page 1

... Symbol Max Unit R 2.08 _C/W qJC R 70 _C/W qJA T 260 _C L Device BU406 BU406G BU407 BU407G 1 http://onsemi.com NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS TO−220AB CASE 221A−09 STYLE MARKING DIAGRAM BU40xG AY WW BU40x = Specific Device Code ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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