BU406 ON Semiconductor, BU406 Datasheet
BU406
Manufacturer Part Number
BU406
Description
TRANS NPN PWR 7A 200V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.BU406G.pdf
(3 pages)
Specifications of BU406
Transistor Type
NPN
Current - Collector (ic) (max)
7A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
1V @ 500mA, 5A
Current - Collector Cutoff (max)
5mA
Power - Max
60W
Frequency - Transition
10MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Other names
BU406OS
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BU406, BU407
NPN Power Transistors
deflection output stages of TV’s and CRT’s.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 8
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Storage
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
These devices are high voltage, high speed transistors for horizontal
High Voltage: V
Fast Switching Speed: t
Low Saturation Voltage: V
Pb−Free Packages are Available*
Derate above 25°C
Characteristics
Rating
− Peak Repetitive
− Peak (10 ms)
CEV
= 330 or 400 V
f
C
= 750 ns (max)
= 25_C
CE(sat)
BU406
BU407
BU406
BU407
BU406
BU407
= 1 V (max) @ 5 A
Symbol
Symbol
T
V
V
V
V
R
R
J
P
CEO
CBO
EBO
, T
T
CEV
I
I
qJC
qJA
C
B
D
L
stg
−65 to 150
Value
0.48
Max
2.08
200
150
400
330
400
330
260
10
15
60
70
6
7
4
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
_C
W
BU406
BU406G
BU407
BU407G
Device
7 AMPERES − 60 WATTS
POWER TRANSISTORS
1
BU40x = Specific Device Code
A
Y
WW
G
150 AND 200 VOLTS
ORDERING INFORMATION
2
3
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
TO−220AB
TO−220AB
TO−220AB
TO−220AB
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
x = 6 or 7
AY WW
BU40xG
Publication Order Number:
CASE 221A−09
TO−220AB
STYLE 1
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Shipping
BU406/D
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BU406 Summary of contents
Page 1
... BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • High Voltage 330 or 400 V CEV • Fast Switching Speed 750 ns (max) f • Low Saturation Voltage (max CE(sat) • ...
Page 2
... 150_C) Î Î Î Î Î BU406, BU407 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...
Page 3
... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BU406/D ...