2N6038G ON Semiconductor, 2N6038G Datasheet - Page 4
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2N6038G
Manufacturer Part Number
2N6038G
Description
TRANS DARL NPN 4A 60V TO225AA
Manufacturer
ON Semiconductor
Type
Power, Switchr
Specifications of 2N6038G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 2A, 3V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-225-3
Current, Gain
100
Current, Input
100 mA
Current, Output
4 A
Package Type
TO-225AA
Polarity
NPN
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
83.3
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
5 V
Voltage, Output
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
2N6038GOS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.7
C
There are two limitations on the power handling ability of
The data of Figures 4 and 5 is based on T
1.0
7.0
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
is variable depending on conditions. Second breakdown
6.0 k
4.0 k
3.0 k
2.0 k
1.0 k
800
600
400
300
5.0
0.04
PNP
2N6034, 2N6035, 2N6036
0.06
7.0
J(pk)
V
CE
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
T
may be calculated from the data in Figure 3.
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
J
10
= 150°C
Figure 4. 2N6035, 2N6036
C
T
= 25°C (SINGLE PULSE)
I
dc
C
C
, COLLECTOR CURRENT (AMP)
= 125°C
0.2
1.0 ms
25°C
20
0.4
2N6036
2N6035
- 55°C
ACTIVE−REGION SAFE−OPERATING AREA
30
0.6
1.0
100 ms
J(pk)
50
V
Figure 7. DC Current Gain
CE
= 150_C;
C
2.0
70
= 3.0 V
http://onsemi.com
− V
J(pk)
CE
100
4.0
4
6.0 k
4.0 k
3.0 k
2.0 k
1.0 k
800
600
400
300
200
100
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
70
50
30
20
10
0.04
0.04
5.0
NPN
2N6038, 2N6039
0.06 0.1
0.06
7.0
V
T
CE
J
0.1
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
T
= 125°C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
0.2
10
PNP
NPN
Figure 5. 2N6038, 2N6039
= 150°C
C
I
V
C
= 25°C (SINGLE PULSE)
R
dc
, COLLECTOR CURRENT (AMP)
Figure 6. Capacitance
, REVERSE VOLTAGE (VOLTS)
0.4 0.6 1.0
0.2
- 55°C
25°C
20
0.4
C
1.0 ms
2N6039
2N6038
ib
2.0
0.6
30
4.0
T
C
1.0
6.0 10
= 25°C
100 ms
50
V
CE
2.0
= 3.0 V
C
70
ob
20
100
4.0
40