2N6038G ON Semiconductor, 2N6038G Datasheet
2N6038G
Manufacturer Part Number
2N6038G
Description
TRANS DARL NPN 4A 60V TO225AA
Manufacturer
ON Semiconductor
Type
Power, Switchr
Specifications of 2N6038G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 2A, 3V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-225-3
Current, Gain
100
Current, Input
100 mA
Current, Output
4 A
Package Type
TO-225AA
Polarity
NPN
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
83.3
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
5 V
Voltage, Output
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
2N6038GOS
(PNP) 2N6034, 2N6035,
2N6036; (NPN) 2N6038,
2N6039
Plastic Darlington
Complementary Silicon
Power Transistors
designed for general purpose amplifier and low−speed switching
applications.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Plastic Darlington complementary silicon power transistors are
Derate above 25°C
Derate above 25°C
ESD Ratings: Machine Model, C; > 400 V
Epoxy Meets UL 94 V−0 @ 0.125 in
Pb−Free Packages are Available*
Characteristic
Human Body Model, 3B; > 8000 V
Rating
2N6035, 2N6038
2N6036, 2N6039
2N6035, 2N6038
2N6036, 2N6039
C
C
= 25°C
= 25°C
Continuous
2N6034
2N6034
Peak
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
I
qJC
qJA
C
B
D
D
stg
– 65 to
Value
+ 150
Max
3.12
83.3
100
320
5.0
4.0
8.0
1.5
40
60
80
40
60
80
40
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Apk
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
40, 60, 80 VOLTS, 40 WATTS
POWER TRANSISTORS
3 2
ORDERING INFORMATION
Y
WW
2N603x = Device Code
G
1
MARKING DIAGRAM
BASE
3
COLLECTOR 2,4
= Year
= Work Week
= Pb−Free Package
x = 4, 5, 6, 8, 9
EMITTER 1
N603xG
YWW
TO−225AA
CASE 77
STYLE 1
2
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2N6038G Summary of contents
Page 1
... Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Symbol Value ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (I = 100 mAdc Collector−Cutoff Current ( Vdc Vdc ...
Page 3
... CE(sat 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP) C ORDERING INFORMATION Device 2N6034 2N6034G 2N6035 2N6035G 2N6036 2N6036G 2N6038 2N6038G 2N6039 2N6039G 3 25° 0.5 A 2.6 4.0 A 2.2 1.8 1.4 1.0 0 100 0.1 0.2 Figure 8. Collector Saturation Region 2 ...
Page 4
−A− 0.25 (0.010 0.25 (0.010 PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z NOTES: 1. DIMENSIONING AND ...