PBSS5350Z,135 NXP Semiconductors, PBSS5350Z,135 Datasheet
PBSS5350Z,135
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934056527135
PBSS5350Z /T3
PBSS5350Z /T3
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PBSS5350Z,135 Summary of contents
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DATA SHEET handbook, halfpage PBSS5350Z 50 V low V Product data sheet Supersedes data of 2003 Jan 20 DISCRETE SEMICONDUCTORS M3D087 PNP transistor CEsat 2003 May 13 ...
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... NXP Semiconductors 50 V low V PNP transistor CEsat FEATURES • Low collector-emitter saturation voltage • High collector current capability: I • High collector current gain (h FE • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DPAK. APPLICATIONS • Power management – ...
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... NXP Semiconductors 50 V low V PNP transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...
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... NXP Semiconductors 50 V low V PNP transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current V CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation BEsat voltage V base-emitter turn-on voltage V ...
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... NXP Semiconductors 50 V low V PNP transistor CEsat 1000 handbook, halfpage h FE 800 (1) 600 (2) 400 (3) 200 0 −1 −10 −1 −10 −10 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors 50 V low V PNP transistor CEsat −1000 handbook, halfpage I C (mA) −800 −600 −400 −200 0 −0.4 −0.8 −1 °C. T amb = −3.96 mA. = −2.64 mA. ( −3.63 mA. = −2.31 mA. ( −3.30 mA. = −1.98 mA. ( −2.97 mA. = −1.65 mA. ( Fig.6 Collector current as a function of collector-emitter voltage; typical values. ...
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... NXP Semiconductors 50 V low V PNP transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 2003 May scale ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...