MMBTA63LT1G ON Semiconductor, MMBTA63LT1G Datasheet - Page 13
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MMBTA63LT1G
Manufacturer Part Number
MMBTA63LT1G
Description
TRANS SS DARL PNP 30V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTA63LT1G.pdf
(4 pages)
Specifications of MMBTA63LT1G
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
225mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 0.5 A
Dc Collector/base Gain Hfe Min
5000
Minimum Operating Temperature
- 55 C
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA63LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON Semiconductor
Quantity:
30 531
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
INF
Quantity:
5 825
Part Number:
MMBTA63LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
Page 13 of 14