MPSW01AG ON Semiconductor, MPSW01AG Datasheet - Page 2

• Manufacturer Part Number: MPSW01AG
• Description: TRANS NPN SS HC 1W 40V TO92
• Manufacturer: ON Semiconductor
• Type: High Currentr

Specifications of MPSW01AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 100mA, 1V
• Power - Max: 1W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Current, Collector: 1000 mA
• Current, Gain: 50
• Frequency: 50 MHz
• Package Type: TO-92
• Polarity: NPN
• Power Dissipation: 2.5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 50 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 50 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: MPSW01AGOS

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL− SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain — Bandwidth Product
Output Capacitance
MPSW01
MPSW01G
MPSW01A
MPSW01AG
MPSW01ARLRA
MPSW01ARLRAG
MPSW01ARLRP
MPSW01ARLRPG
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CB
CB
EB
CB
= 100 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 1000 mAdc, V
= 1000 mAdc, I
= 1000 mAdc, V
= 50 mAdc, V
= 3.0 Vdc, I
= 30 Vdc, I
= 40 Vdc, I
= 10 Vdc, I
B
E
E
E
E
C
C
CE
CE
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
= 0)
= 0)
B
= 0)
CE
CE
= 1.0 Vdc)
= 10 Vdc, f = 20 MHz)
= 100 mAdc)
Device
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
MPSW01, MPSW01A
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
MPSW01
MPSW01A
MPSW01
MPSW01A
MPSW01
MPSW01A
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
C
I
BE(on)
h
CBO
EBO
f
obo
FE
T
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
2000 / Ammo Box
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
Shipping
Min
5.0
30
40
40
50
55
60
50
50
−
−
−
−
−
−
†
Max
0.1
0.1
0.1
0.5
1.2
20
−
−
−
−
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−