SMBTA 06 E6327 Infineon Technologies, SMBTA 06 E6327 Datasheet - Page 5

• Manufacturer Part Number: SMBTA 06 E6327
• Description: TRANSISTOR AF NPN SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBTA 06 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SMBTA 06 E6327; SMBTA06E6327INTR; SMBTA06E6327XT; SP000011686

Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
10
10
10
10
5
5
5
/P
3
2
1
0
10
-6
totDC
10
=
-5
(t
10
p
-4
)
D
=
t
T
10
p
-3
t
p
10
-2
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
s
p
EHP00816
10
0
5
SMBTA06/MMBTA06
2007-04-19