SMBTA 06 E6327 Infineon Technologies, SMBTA 06 E6327 Datasheet - Page 3

• Manufacturer Part Number: SMBTA 06 E6327
• Description: TRANSISTOR AF NPN SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBTA 06 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SMBTA 06 E6327; SMBTA06E6327INTR; SMBTA06E6327XT; SP000011686

DC current gain h
V
Base-emitter saturation voltage
I
h
C
C
CE
FE
mA
=
10
10
10
10
10
5
5
5
10
10
10
10
= 1 V
3
2
1
0
-1
(V
3
2
1
0
0
10
BEsat
100 C
-1
-50 C
25 C
), h
10
0
FE
0.5
FE
= 10
=
10
1
(I
C
)
1.0
10
V
2
100 ˚C
C
-50 ˚C
BEsat
25 ˚C
EHP00821
mA
EHP00818
V
10
1.5
3
3
Collector-emitter saturation voltage
I
Collector current I
V
C
C
C
CE
= (V
mA
10
10
10
10
10
mA
5
5
10
10
10
10
= 1V
5
5
5
3
2
1
0
-1
0.0
3
2
1
0
0
CEsat
0.1 0.2
), h
FE
SMBTA06/MMBTA06
0.5
100
0.3
= 10
C
25 C
-50 C
= (V
C
0.4
BE
0.5
)
1.0
2007-04-19
0.6
V
100 C
-50 C
BE
25 C
V
EHP00815
CEsat
EHP00819
V
V
1.5
0.8