BSP19AT1G ON Semiconductor, BSP19AT1G Datasheet - Page 2

• Manufacturer Part Number: BSP19AT1G
• Description: TRANS NPN 100MA 350V SOT223
• Manufacturer: ON Semiconductor

Specifications of BSP19AT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 800mW
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 100 mA
• Power Dissipation: 0.8 W
• Maximum Operating Frequency: 5 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Gain Bandwidth Product Ft: 70 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 350V
• Collector-base Voltage: 400V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 40
• Frequency (max): 70MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP19AT1GOSTR

2. Pulse Test: Pulse Width  300 ms, Duty Cycle = 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Current-Gain — Bandwidth Product
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(I
(V
(V
(I
(I
(I
(I
C
C
C
C
C
CB
EB
= 1.0 mAdc, I
= 20 mAdc, V
= 10 mAdc, V
= 50 mAdc, I
= 50 mAdc, I
= 5.0 Vdc, I
= 400 Vdc, I
B
B
B
C
CE
CE
E
= 4.0 mAdc)
= 4.0 mAdc)
= 0)
= 0)
= 0)
= 10 Vdc)
= 10 Vdc, f = 5.0 MHz)
Characteristics
(T
A
= 25C unless otherwise noted)
http://onsemi.com
2
V
Symbol
V
V
(BR)CEO
I
I
CE(sat)
BE(sat)
h
CBO
EBO
f
FE
T
Min
350
40
70
--
--
--
--
Max
0.5
1.3
20
10
--
--
--
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
--