BSP19AT1G ON Semiconductor, BSP19AT1G Datasheet

BSP19AT1G

Manufacturer Part Number

BSP19AT1G

Description

TRANS NPN 100MA 350V SOT223

Manufacturer

ON Semiconductor

Datasheet

1.BSP19AT1G.pdf (4 pages)

Specifications of BSP19AT1G

Transistor Type

NPN

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

350V

Vce Saturation (max) @ Ib, Ic

500mV @ 4mA, 50mA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 20mA, 10V

Power - Max

800mW

Frequency - Transition

70MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

350 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

100 mA

Maximum Dc Collector Current

100 mA

Power Dissipation

0.8 W

Maximum Operating Frequency

5 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

Gain Bandwidth Product Ft

70 MHz

Minimum Operating Temperature

- 65 C

Number Of Elements

Collector-emitter Voltage

350V

Collector-base Voltage

400V

Emitter-base Voltage

Collector Current (dc) (max)

100mA

Dc Current Gain (min)

Frequency (max)

70MHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BSP19AT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSP19AT1G

Manufacturer:

FSC

Quantity:

36 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSP19AT1G

Manufacturer:

Quantity:

1 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSP19AT1G

Manufacturer:

Quantity:

30 000

Company:

Euro Chip Distribution

Part Number:

BSP19AT1G

Quantity:

805

Current page: 1 of 4
Download datasheet (182Kb)

BSP19AT1G

NPN Silicon Expitaxial

Transistor

as a general purpose amplifier and in switching applications. The

device is housed in the SOT-223 package which is designed for

medium power surface mount applications.

Features



Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum

 Semiconductor Components Industries, LLC, 2010

September, 2010 - - Rev. 8

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector-Emitter Voltage (Open Base)

Collector-Base Voltage (Open Emitter)

Emitter-Base Voltage (Open Collector)

Collector Current (DC)

Total Power Dissipation @ T

(Note 1)

Derate above 25C

Thermal Resistance, Junction--to--Ambient

Junction and Storage Temperature Range

This family of NPN Silicon Epitaxial transistors is designed for use

SOT-223 Package Ensures Level Mounting, Resulting in Improved

Thermal Conduction, and Allows Visual Inspection of Soldered Joints

Eliminating the Possibility of Damage to the Die

Compliant

High Voltage: V

The SOT-223 Package Can Be Soldered Using Wave or Reflow

The Formed Leads Absorb Thermal Stress During Soldering,

PNP Complement is BSP16T1

Moisture Sensitivity Level (MSL): 1

ESD:

These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS

recommended footprint.

Human Body Model (HBM) = 4 KV

Machine Model (MM) = 400 V

Characteristic

Rating

(BR)CEO

= 25C unless otherwise noted)

of 250 and 350 V

= 25C

Symbol

CEO

CBO

EBO

θJA

stg

--65 to +150

Value

Max

350

400

100

156

5.0

0.8

6.4

mW/C

mAdc

C/W

Unit

Vdc

C

†For information on tape and reel specifications,

TRANSISTOR SURFACE MOUNT

BSP19AT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NPN SILICON HIGH VOLTAGE

Device

(Note: Microdot may be in either location)

CASE 318E

TO-261AA

STYLE 1

SP19A = Specific Device Code

ORDERING INFORMATION

SOT- -223 PACKAGE

BASE

http://onsemi.com

COLLECTOR 2,4

= Assembly Location

= Year

= Work Week

= Pb--Free Package

(Pb--Free)

SOT--223

Package

EMITTER 3

Base

Publication Order Number:

MARKING

DIAGRAM

1000 / Tape & Reel

Collector

SP19A G

Collector

AYW

Shipping

BSP19AT1/D

Emitter

†

Related parts for BSP19AT1G

BSP19AT1G Summary of contents

Page 1

... D 6.4 mW/C R 156 C/W θJA T --65 to +150 C stg BSP19AT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com SOT- -223 PACKAGE COLLECTOR 2,4 BASE 1 EMITTER 3 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I = 1.0 mAdc Collector-Base Cutoff Current (V = 400 Vdc Emitter-Base Cutoff Current (V = 5.0 Vdc ...

Page 3

T = 125C J 100 T = 25 --55 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain 1.2 IC/ 55C J ...

Page 4

... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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