PZT2907AT1G ON Semiconductor, PZT2907AT1G Datasheet - Page 2

• Manufacturer Part Number: PZT2907AT1G
• Description: TRANS SS SW PNP 600MA 60V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZT2907AT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 1.5 W
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 600mA
• Frequency (max): 200MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: PZT2907AT1GOS; PZT2907AT1GOS; PZT2907AT1GOSTR

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING TIMES
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
Base−Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltages
Base-Emitter Saturation Voltages
Current-Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CE
CE
CB
EB
= −10 mAdc, I
= −10 mAdc, I
= 10 mAdc, I
= − 0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −150 mAdc, V
= − 500 mAdc, V
= −150 mAdc, I
= − 500 mAdc, I
= −150 mAdc, I
= − 500 mAdc, I
= − 50 mAdc, V
= − 50 Vdc, I
= − 30 Vdc, V
= − 30 Vdc, V
= − 2.0 Vdc, I
= −10 Vdc, I
B
E
C
E
E
= 0)
CE
C
= 0)
= 0)
CE
B
B
BE
BE
CE
B
CE
B
CE
= 0, f = 1.0 MHz)
= 0)
CE
= 0, f = 1.0 MHz)
= −15 mAdc)
= −15 mAdc)
= − 50 mAdc)
= −50 mAdc)
= −10 Vdc)
= − 20 Vdc, f = 100 MHz)
= 0.5 Vdc)
= − 0.5 Vdc)
= −10 Vdc)
= −10 Vdc)
= −10 Vdc)
= −10 Vdc)
Characteristic
(Note 2)
(V
(V
CC
CC
= − 6.0 Vdc, I
(T
= − 30 Vdc, I
I
B1
A
I
B1
= 25°C unless otherwise noted)
= I
= −15 mAdc)
B2
= −15 mAdc)
C
C
= −150 mAdc,
= −150 mAdc,
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
I
I
BE(sat)
I
h
CBO
CEX
BEX
C
C
t
t
f
on
t
t
FE
t
off
t
T
d
s
r
f
e
c
−5.0
Min
−60
−60
100
100
100
200
75
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−0.4
−1.6
−1.3
−2.6
−50
−50
−10
300
100
8.0
30
45
10
40
80
30
−
−
−
−
−
−
−
−
nAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
ns
−