PZT2907AT1G ON Semiconductor, PZT2907AT1G Datasheet

TRANS SS SW PNP 600MA 60V SOT223

PZT2907AT1G

Manufacturer Part Number
PZT2907AT1G
Description
TRANS SS SW PNP 600MA 60V SOT223
Manufacturer
ON Semiconductor
Datasheet

Specifications of PZT2907AT1G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
1.5W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
1.5 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65 C
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage
60V
Emitter-base Voltage
5V
Collector Current (dc) (max)
600mA
Frequency (max)
200MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
PZT2907AT1GOS
PZT2907AT1GOS
PZT2907AT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PZT2907AT1G
Manufacturer:
ON
Quantity:
15 000
Part Number:
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Manufacturer:
ON
Quantity:
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PZT2907AT1G
Manufacturer:
ON Semiconductor
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PZT2907AT1G
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PZT2907AT1
PNP Silicon
Epitaxial Transistor
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 8
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation (Note 1)
Thermal Resistance Junction−to−Ambient
Lead Temperature for Soldering,
Operating and Storage Temperature Range
This PNP Silicon Epitaxial transistor is designed for use in linear
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die.
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved
Pb−Free Packages are Available
T
(Note 1)
0.0625″ from case
Time in Solder Bath
A
= 25°C
Characteristic
Rating
Preferred Device
2
of copper area.
Symbol
Symbol
T
V
V
V
R
J
P
CEO
CBO
EBO
T
, T
I
qJA
C
D
L
stg
−65 to
Value
−600
+150
−5.0
Max
83.3
−60
−60
260
1.5
12
10
1
mW/°C
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Sec
°C
°C
W
†For information on tape and reel specifications,
PZT2907AT1
PZT2907AT1G
PZT2907AT3
PZT2907AT3G
Preferred devices are recommended choices for future use
and best overall value.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 318E
Device
(Note: Microdot may be in either location)
SOT−223
STYLE 1
ORDERING INFORMATION
BASE
P2F
A
Y
W
G
http://onsemi.com
1
(Pb−Free)
(Pb−Free)
SOT−223
SOT−223
SOT−223
SOT−223
Package
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
COLLECTOR
EMITTER
Publication Order Number:
2, 4
3
1
1000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
MARKING
DIAGRAM
Shipping
P2F G
AYW
PZT2907AT1/D
G

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PZT2907AT1G Summary of contents

Page 1

... PZT2907AT1 −65 to °C J stg +150 PZT2907AT1G PZT2907AT3 PZT2907AT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Base Breakdown Voltage (I = −10 mAdc Collector−Emitter Breakdown Voltage ( mAdc Emitter−Base Breakdown Voltage (I = −10 mAdc ...

Page 3

INPUT PRF = 150 Hz RISE TIME ≤ 2 − 200 ns Figure 1. Delay and Rise Time Test Circuit TYPICAL ELECTRICAL CHARACTERISTICS 1000 T = 125°C J ...

Page 4

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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