MMBTA42,215 NXP Semiconductors, MMBTA42,215 Datasheet

TRANS NPN 300V 100MA SOT23

MMBTA42,215

Manufacturer Part Number
MMBTA42,215
Description
TRANS NPN 300V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBTA42215.pdf (8 pages)

Specifications of MMBTA42,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Transistor Type
NPN
Frequency - Transition
50MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Collector/base Gain Hfe Min
25 at 1 mA at 10 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933818950215::MMBTA42 T/R::MMBTA42 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MMBTA42,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
MMBTA42
NPN high-voltage transistor
Product specification
2000 Apr 11

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MMBTA42,215 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage MMBTA42 NPN high-voltage transistor Product specification M3D088 2000 Apr 11 ...

Page 2

Philips Semiconductors NPN high-voltage transistor FEATURES Low current (max. 100 mA) High voltage (max. 300 V). APPLICATIONS Telephony Professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. MARKING TYPE NUMBER MMBTA42 7D Note 1. ...

Page 3

Philips Semiconductors NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector cut-off ...

Page 4

Philips Semiconductors NPN high-voltage transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 5

Philips Semiconductors NPN high-voltage transistor DATA SHEET STATUS PRODUCT DATA SHEET STATUS STATUS Objective specification Development Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form ...

Page 6

Philips Semiconductors NPN high-voltage transistor 2000 Apr 11 NOTES 6 Product specification MMBTA42 ...

Page 7

Philips Semiconductors NPN high-voltage transistor 2000 Apr 11 NOTES 7 Product specification MMBTA42 ...

Page 8

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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