MMBT2222ALT1 Infineon Technologies, MMBT2222ALT1 Datasheet - Page 5

• Manufacturer Part Number: MMBT2222ALT1
• Description: TRANSISTOR SWITCHING NPN SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBT2222ALT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 330mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT2222ALT1INTR; MMBT2222ALT1XT; MMBT2222ALT1XTINTR; MMBT2222ALT1XTINTR; SP000011174

h
f
DC current gain h
V
Transition frequency f
V
T
FE
CE
CE
MHz
10
10
10
10
10
10
2
5
2
= 10 V
= 20 V
5
5
3
2
1
10
3
2
1
10
SMBT 2222/A
SMBT 2222/A
0
-1
5
10
0
10
FE
1
=
T
10
150 ˚C
-50 ˚C
=
(I
25 ˚C
1
5
C
)
(I
10
C
2
)
10
mA
C
2
EHP00743
EHP00741
mA
C
5
10
10
3
3
5
Saturation voltage I
h
Collector-base capacitance C
Emitter-base capacitance C
C
FE
mA
10
10
10
10
10
5
5
5
= 10
pF
35
25
20
15
10
3
2
1
0
-1
5
0
0
0
SMBT 2222/A
SMBT2222A/MMBT2222A
0.2
V
CE
5
CEB
0.4
10
C
= (V
0.6
15
BEsat
0.8
eb
V
cb
BE sat
2007-04-19
= (V
; V
V
= (V
V
BE
1.0
CCB
V ,
CEsat
EHP00742
V
EB
CE sat
CB
V
CB
)
(V
)
25
1.2
)
EB
)