MMBT2222AWT1G ON Semiconductor, MMBT2222AWT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT2222AWT1G
• Description: TRANS GP SS NPN 40V SOT323
• Manufacturer: ON Semiconductor

Specifications of MMBT2222AWT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 35 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2222AWT1GOS; MMBT2222AWT1GOS; MMBT2222AWT1GOSTR

200
100
7.0
5.0
3.0
2.0
8.0
4.0
2.0
7.0
5.0
3.0
2.0
6.0
70
50
30
20
10
10
30
20
10
0
0.01 0.02 0.05
5.0 7.0
0.1
0.2 0.3 0.5 0.7
10
Figure 7. Frequency Effects
I
500 mA, R
100 mA, R
50 mA, R
0.1
C
Figure 5. Turn −On Time
= 1.0 mA, R
I
Figure 9. Capacitances
C
REVERSE VOLTAGE (VOLTS)
20
, COLLECTOR CURRENT (mA)
0.2
1.0
f, FREQUENCY (kHz)
S
30
S
S
= 4.0 kW
= 200 W
= 2.0 kW
0.5
S
= 150 W
2.0 3.0 5.0 7.0 10
50
1.0 2.0
t
t
t
r
d
d
70
@ V
@ V
@ V
C
eb
CC
EB(off)
EB(off)
100
5.0 10
= 30 V
R
R
R
S
S
S
= 2.0 V
= 0
= OPTIMUM
=
=
SOURCE
RESISTANCE
200
20
20 30
I
T
C
C
J
cb
/I
300
http://onsemi.com
= 25°C
B
= 10
50
500
100
50
4
500
300
200
100
300
200
100
500
7.0
5.0
8.0
4.0
2.0
6.0
70
50
30
20
10
10
70
50
0
50
1.0
5.0 7.0
Figure 10. Current−Gain Bandwidth Product
100 200
Figure 8. Source Resistance Effects
2.0
10
f = 1.0 kHz
V
T
t′
CE
J
3.0
I
100 mA
500 mA
1.0 mA
s
C
R
= 25°C
= t
Figure 6. Turn −Off Time
S
= 50 mA
I
= 20 V
I
C
C
500 1.0 k 2.0 k
, SOURCE RESISTANCE (OHMS)
20
s
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
t
- 1/8 t
f
5.0 7.0
30
f
50
10
70
5.0 k 10 k 20 k
100
20
30
200 300
V
I
I
T
C
B1
CC
J
50
/I
= 25°C
B
= I
= 30 V
50 k 100 k
= 10
B2
70 100
500