MMBT2222AWT1G ON Semiconductor, MMBT2222AWT1G Datasheet

MMBT2222AWT1G

Manufacturer Part Number

MMBT2222AWT1G

Description

TRANS GP SS NPN 40V SOT323

Manufacturer

ON Semiconductor

Datasheet

1.MMBT2222AWT1G.pdf (6 pages)

Specifications of MMBT2222AWT1G

Transistor Type

NPN

Current - Collector (ic) (max)

600mA

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

1V @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

150mW

Frequency - Transition

300MHz

Mounting Type

Surface Mount

Package / Case

SC-70-3, SOT-323-3

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

6 V

Continuous Collector Current

0.6 A

Maximum Dc Collector Current

0.6 A

Power Dissipation

150 mW

Maximum Operating Frequency

300 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

35 at 0.1 mA at 10 V

Minimum Operating Temperature

- 55 C

Number Of Elements

Collector-emitter Voltage

40V

Collector-base Voltage

75V

Emitter-base Voltage

Collector Current (dc) (max)

600mA

Frequency (max)

300MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SC-70

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MMBT2222AWT1GOS
MMBT2222AWT1GOS
MMBT2222AWT1GOSTR

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Download datasheet (122Kb)

MMBT2222AWT1

General Purpose Transistor

NPN Silicon

applications. They are housed in the SOT−323/SC−70 package which

is designed for low power surface mount applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

October, 2010 − Rev. 5

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Total Device Dissipation FR− 5 Board

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

These transistors are designed for general purpose amplifier

Compliant

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

= 25°C

Characteristic

Rating

Symbol

CEO

CBO

EBO

, T

qJA

stg

−55 to +150

Value

Max

600

150

833

6.0

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

MMBT2222AWT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*Date Code orientation may vary depending

upon manufacturing location.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

P1 = Specific Device Code

M = Date Code*

G = Pb−Free Package

MARKING DIAGRAM

BASE

http://onsemi.com

COLLECTOR

(Pb−Free)

P1 M G

Package

EMITTER

SC−70

Publication Order Number:

CASE 419

STYLE 3

SC−70

MMBT2222AWT1/D

3000/Tape & Reel

Shipping

†

Related parts for MMBT2222AWT1G

MMBT2222AWT1G Summary of contents

Page 1

... Unit P 150 mW D 833 R °C/W qJA −55 to +150 °C J stg MMBT2222AWT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 SC−70 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1.0 mAdc Collector −Base Breakdown Voltage ( mAdc Emitter −Base Breakdown Voltage ( ...

Page 3

SWITCHING TIME EQUIVALENT TEST CIRCUITS 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% + < Figure 1. Turn−On Time 1000 700 500 300 200 100 0.1 ...

Page 4

EB(off EB(off 7.0 5.0 3.0 2.0 5.0 7 100 I , COLLECTOR CURRENT (mA) C ...

Page 5

0.1 −55°C 25°C 0.01 0.001 0. COLLECTOR CURRENT (A) C Figure 11. Collector Emitter Saturation Voltage vs. Collector Current 1.2 1 1.0 0.9 −55°C 0.8 25°C ...

Page 6

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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