2STC4467 STMicroelectronics, 2STC4467 Datasheet - Page 3

• Manufacturer Part Number: 2STC4467
• Description: TRANS NPN HP BIPO 120V TO-3P
• Manufacturer: STMicroelectronics

Specifications of 2STC4467

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 120V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 3A, 4V
• Power - Max: 80W
• Frequency - Transition: 20MHz
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 120V
• Transition Frequency Typ Ft: 20MHz
• Power Dissipation Pd: 80W
• Dc Collector Current: 8A
• Dc Current Gain Hfe: 140
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 497-6957-5

2STC4467
2
Table 4.
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
V
V
V
V
Symbol
(BR)CEO
(BR)EBO
CE(sat)
(BR)CBO
I
I
h
CBO
EBO
f
FE
T
(1)
(1)
(1)
Electrical characteristics
(T
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter breakdown
voltage (I
Collector-base breakdown
voltage (I
Emitter-base breakdown voltage
(I
Collector-emitter saturation
voltage
DC current gain
Transition frequency
case
Electrical characteristics
E
C
C
= 0)
= 0)
= 0)
= 25 °C; unless otherwise specified)
B
E
= 0)
= 0)
Parameter
V
V
I
I
I
I
I
I
C
C
E
C
C
C
CB
EB
= 50 mA
= 100 µA
= 1 mA
= 3 A
= 3 A
= 0.5 A
= 6 V
= 120 V
Test conditions
I
V
V
B
CE
CE
= 300 mA
= 4 V
= 12 V
Min.
120
120
70
6
Electrical characteristics
Typ.
20
Max.
140
1.5
10
10
MHz
Unit
µA
µA
V
V
V
V
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