2STW1693 STMicroelectronics, 2STW1693 Datasheet - Page 3

• Manufacturer Part Number: 2STW1693
• Description: TRANS PNP LV BIPO 80V TO-247
• Manufacturer: STMicroelectronics

Specifications of 2STW1693

• Transistor Type: PNP
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 600mA, 6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 2A, 4V
• Power - Max: 60W
• Frequency - Transition: 20MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 60W
• Dc Collector Current: 6A
• Dc Current Gain Hfe: 50
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2STW1693; 497-7063-5

2STW1693
2
Electrical characteristics
(T
Table 4.
1.
V
V
V
V
case
Symbol
CE(sat)
V
(BR)EBO
(BR)CBO
(BR)CEO
C
Pulsed duration = 300 µs, duty cycle ≤ 1.5%
I
I
BE
h
CBO
EBO
t
t
CBO
stg
f
on
t
FE
T
f
= 25 °C; unless otherwise specified)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Emitter cut-off current
(I
Emitter-base breakdown
voltage (I
Collector-base breakdown
voltage (I
Collector-emitter breakdown
voltage (I
Collector-emitter saturation
voltage
Base-emitter voltage
DC current gain
Transition frequency
Collector-base capacitance
(I
Resistive load
Turn-on time
Storage time
Fall time
E
C
E
= 0)
= 0)
= 0)
Parameter
C
E
B
= 0)
= 0)
= 0)
V
V
I
I
I
I
I
V
I
I
V
I
I
E
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
= -1 mA
= -100 µA
= -50 mA
= -2 A
= -6 A
= -2 A
= -0.5 A
= -3 A
= -I
= -6 V
= -100 V
= -4 V
= -10 V
B2
Test conditions
= -0.3 A
V
CC
= -30 V
I
I
I
B
B
V
V
f = 1 MHz
C
CE
CE
= -200 mA
= -600 mA
= -6 A
= -4 V
= -12 V
Min.
-100
-80
50
-6
Electrical characteristics
Typ.
0.18
0.09
0.6
20
80
Max.
-0.1
-0.1
-0.6
-1.5
-1.5
120
MHz
Unit
µA
µA
pF
ns
ns
ns
V
V
V
V
V
V
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