2N2102 STMicroelectronics, 2N2102 Datasheet - Page 2

• Manufacturer Part Number: 2N2102
• Description: TRANSISTOR NPN 120V 1A TO-39
• Manufacturer: STMicroelectronics
• Type: Amplifier, General Purposer

Specifications of 2N2102

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 15mA, 150mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 10V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-39-3, TO-205AD, Metal Can
• Current, Collector: 1 A
• Current, Collector Cutoff: 2 nA
• Current, Gain: 120
• Package Type: TO-39
• Polarity: NPN
• Power Dissipation: 5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 30 °C/W
• Temperature, Operating, Maximum: 175 °C
• Thermal Resistance, Junction To Ambient: 150 °C/W
• Voltage, Breakdown, Collector To Base: 120 V
• Voltage, Breakdown, Collector To Emitter: 65 V
• Voltage, Collector To Base: 120 V
• Voltage, Collector To Emitter: 65 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 7 V
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 65V
• Power Dissipation Pd: 1W
• Dc Collector Current: 1A
• Dc Current Gain Hfe: 40
• No. Of Pins: 3
• Collector Current @ Hfe: 150mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2636-5

2N2102
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle
V
V
Symbol
V
R
CEO(sus)
R
(BR)CBO
CE(sat)
BE(sat)
C
C
thj-case
h
I
I
h
thj-amb
CBO
NF
EBO
FE
CBO
EBO
fe
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
High Frequency
Current Gain
Noise Figure
Collector-Base
Capacitance
Emitter-Base
Capacitance
C
E
B
= 0)
= 0)
= 0)
Parameter
E
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f = 20 MHz
I
BW = 1 Hz
I
I
C
C
C
C
C
C
C
C
C
C
C
C
E
C
CB
CB
EB
= 0
= 100 A
= 30 mA
= 150 mA
= 150 mA
= 10 A
= 100 A
= 10 mA
= 150 mA
= 500 mA
= 1 A
= 50 mA
= 300 A
= 0
= 5 V
= 60 V
= 60 V
case
1 %
= 25
V
V
Test Conditions
CB
EB
V
= 10 V
= 0.5 V
o
CE
C unless otherwise specified)
R
T
V
V
V
V
V
V
V
= 10 V f = 1 KHz
I
I
C
g
B
B
CE
CE
CE
CE
CE
CE
CE
= 510
= 150
= 15 mA
= 15 mA
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
f = 1MHz
f = 1MHz
o
C
Max
Max
Min.
120
65
10
20
35
40
25
10
Typ.
150
30
6
Max.
120
0.5
1.1
15
80
2
2
5
8
o
o
Unit
C/W
C/W
nA
nA
dB
pF
pF
V
V
V
V
A