BUL38D STMicroelectronics, BUL38D Datasheet - Page 3

• Manufacturer Part Number: BUL38D
• Description: TRANSISTOR NPN 450V 10A TO-220
• Manufacturer: STMicroelectronics
• Type: High Voltage, Power, Switchr

Specifications of BUL38D

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 750mA, 3A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 10mA, 5V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 10
• Current, Collector: 5 A
• Current, Gain: 60
• Package Type: TO-220
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.56 °C/W
• Voltage, Breakdown, Collector To Emitter: 450 V
• Voltage, Collector To Emitter: 450 V
• Voltage, Collector To Emitter, Saturation: 1.1 V
• Voltage, Emitter To Base: 9 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2581-5

BUL38D
2
Electrical characteristics
(T
Table 4.
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%.
2. The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the
V
V
V
case
CEO(sus)
h
Symbol
CE(sat)
BE(sat)
right to ship either groups according to production availability. Please contact your nearest
STMicrolectronics sales office for delivery details.
FE
V
I
I
CES
CEO
V
EBO
t
t
t
t
t
t
(1)(2)
s
s
s
f
f
f
F
= 25°C unless otherwise specified)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Collector-emitter
sustaining voltage (I
Emitter-base voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Inductive load
Storage time
Fall time
Inductive load
Storage time
Fall time
Diode forward voltage
B
C
BE
=0)
= 0)
= 0)
Parameter
Doc ID 7176 Rev 3
B
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
I
Group A
Group B
V
I
t
I
V
V
I
V
V
T
I
C
E
C
C
C
C
C
C
C
C
B(on)
P
C
C
F
C
CE
CE
CE
CC
BE(off)
CL
BE(off)
CL
= 2 A
=100 mA
= 10 mA
= 1 A
= 2 A
= 3 A
= 1 A
= 2 A
= 10 mA
= 0.5 A
= 2 A
= 2 A
= 2 A
= 30 µs
= 125 °C
= 250 V
= 250 V
= 800 V
= 800 V
= 450 V
= 150 V
Test conditions
= -I
= -5 V R
= -5 V R
B(off)
__
_
_
_
_ _
= 0.5 A
T
_I
L = 200 µH
I
I
B(on)
B(on)
L = 200 µH
c
I
I
I
I
V
V
BB(off)
I
B
B
B
B
B
V
BB(off)
C
= 125 °C
CE
CE
CE
= 0.2 A
= 0.4 A
= 0.75 A
= 0.2 A
= 0.4 A
= 2.5 A
= 0.4 A
= 0.4 A
= 5 V
= 5 V
= 5 V
=0
=0
Min.
Electrical characteristics
450
10
13
22
9
1
Typ.
100
1.3
55
1
Max.
100
500
250
100
0.5
0.7
1.1
1.1
1.2
2.2
0.8
1.8
1.5
60
23
32
Unit
µA
µA
µA
µs
µs
µs
ns
µs
ns
V
V
V
V
V
V
V
V
3/10