2N3019 STMicroelectronics, 2N3019 Datasheet

2N3019

Manufacturer Part Number

2N3019

Description

TRANSISTOR NPN 140V 1A TO-39

Manufacturer

STMicroelectronics

Type

Amplifier, High Currentr

Datasheets

1.2N3019.pdf (4 pages)

2.2N3019.pdf (3 pages)

Specifications of 2N3019

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

500mV @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

800mW

Frequency - Transition

100MHz

Mounting Type

Through Hole

Package / Case

TO-39-3, TO-205AD, Metal Can

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

7 V

Continuous Collector Current

1 A

Maximum Dc Collector Current

1 A

Power Dissipation

800 mW

Maximum Operating Frequency

100 MHz

Dc Collector/base Gain Hfe Min

100

Current, Collector

1 A

Current, Gain

300

Frequency

100 MHz

Package Type

TO-39

Polarity

NPN

Primary Type

Resistance, Thermal, Junction To Case

30 °C/W

Voltage, Breakdown, Collector To Emitter

80 V

Voltage, Collector To Base

140 V

Voltage, Collector To Emitter

80 V

Voltage, Collector To Emitter, Saturation

0.5 V

Voltage, Emitter To Base

7 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

497-2634-5

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N3019

Manufacturer:

MOT

Quantity:

1 252

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N3019

Manufacturer:

Quantity:

2 000

Company:

BOSTOCK HK LIMITED

Part Number:

2N3019

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

2N3019

Manufacturer:

ASI

Quantity:

20 000

Company:

BOSTOCK HK LIMITED

Part Number:

2N3019A

Manufacturer:

Current page: 1 of 3
Download datasheet (37Kb)

DESCRIPTION

The 2N3019 is a silicon Planar Epitaxial NPN

transistor in Jedec TO-39 metal case, designed

for

application. It feature high gain and low saturation

voltage.

ABSOLUTE MAXIMUM RATINGS

Symbol

CBO

CEO

EBO

stg

tot

high-current,

Collector-Base Voltage (I

Collector-Emitter Voltage (I

Emitter-Base Voltage (I

Collector Current

Total Dissipation at T

Storage Temperature

Max. Operating Junction Temperature

high

frequency

at T

Parameter

amb

= 0)

SMALL SIGNAL NPN TRANSISTOR

amplifier

INTERNAL SCHEMATIC DIAGRAM

-65 to 175

Value

140

175

0.8

TO-39

2N3019

Unit

1/4

Related parts for 2N3019

2N3019 Summary of contents

Page 1

... DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency application. It feature high gain and low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (I CEO V Emitter-Base Voltage (I EBO ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) ...

Page 3

... TO-39 MECHANICAL DATA DIM. MIN TYP. MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N3019 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 3/4 ...

Related keywords

2n301
2n3019
2n3014
2N3019 datasheet
2N3019 data sheet
2N3019 pdf datasheet
2N3019 component
2N3019 part
2N3019 distributor
2N3019 RoHS
2N3019 datasheet download