2N6111 STMicroelectronics, 2N6111 Datasheet

TRANS PNP SWITCH 40V 7A TO-220

2N6111

Manufacturer Part Number
2N6111
Description
TRANS PNP SWITCH 40V 7A TO-220
Manufacturer
STMicroelectronics
Type
Medium Power, Switchr
Datasheets

Specifications of 2N6111

Transistor Type
PNP
Current - Collector (ic) (max)
7A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
3.5V @ 3A, 7A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 3A, 4V
Power - Max
40W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
7 A
Power Dissipation
40 W
Continuous Collector Current
- 7 A
Dc Collector/base Gain Hfe Min
23
Maximum Operating Frequency
4 MHz
Current, Collector
-7 A
Current, Gain
2.3
Frequency
4 MHz
Package Type
TO-220
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
3.12 °C/W
Voltage, Breakdown, Collector To Emitter
-30 V
Voltage, Collector To Base
-40 V
Voltage, Collector To Emitter
-30 V
Voltage, Collector To Emitter, Saturation
-3.5 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2613-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6111
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NXP
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2N6111
Manufacturer:
ST
Quantity:
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Part Number:
2N6111
Manufacturer:
ST
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2N6111.
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ST
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Part Number:
2N6111G
Manufacturer:
ON
Quantity:
400
APPLICATIONS:
DESCRIPTION
The 2N6111 is an Epitaxial-Base PNP silicon
transistor in Jedec TO-220 plastic package. It is
intended for a wide variety of medium power
switching and linear applications.
ABSOLUTE MAXIMUM RATINGS
December 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPE
PNP TRANSISTOR
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
V
V
V
V
T
P
CBO
CEX
CEO
EBO
I
I
T
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (R
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
SILICON PNP SWITCHING TRANSISTOR
Parameter
c
= 25
C
E
= 0)
= 0)
B
o
BE
C
= 0)
= 100
)
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
150
-40
-40
-30
40
TO-220
-5
-7
-3
1
2
2N6111
3
Unit
o
o
W
V
V
V
V
A
A
C
C
1/4

Related parts for 2N6111

2N6111 Summary of contents

Page 1

... SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package intended for a wide variety of medium power switching and linear applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEX Current ( 1.5V Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CER(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage ...

Page 3

... TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

Page 4

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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