BD139 STMicroelectronics, BD139 Datasheet - Page 9

TRANSISTOR NPN SOT-32

BD139

Manufacturer Part Number
BD139
Description
TRANSISTOR NPN SOT-32
Manufacturer
STMicroelectronics
Type
Amplifier, Driverr
Datasheets

Specifications of BD139

Transistor Type
NPN
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1.25W
Mounting Type
Through Hole
Package / Case
TO-126-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1.5 A
Maximum Dc Collector Current
1.5 A
Power Dissipation
12.5 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Current, Collector
1.5 A
Current, Gain
250
Package Type
SOT-32
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
10 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
25
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6656-5
BD139ST

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BD135 - BD136 - BD139 - BD140
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