TIP110 STMicroelectronics, TIP110 Datasheet
TIP110
Manufacturer Part Number
TIP110
Description
TRANS NPN DARL 60V 2A TO-220
Manufacturer
STMicroelectronics
Type
Power, Switchr
Specifications of TIP110
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
2.5V @ 8mA, 2A
Current - Collector Cutoff (max)
2mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 4V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
2 A
Maximum Collector Cut-off Current
1000 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Current, Gain
500
Current, Input
50 mA
Current, Output
2 A
Package Type
TO-220
Polarity
NPN
Power Dissipation
50 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
62.5
Voltage, Collector To Emitter, Saturation
2.5 V
Voltage, Input
5 V
Voltage, Output
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2545-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP110
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
TIP110G
Manufacturer:
ON/安森美
Quantity:
20 000
APPLICATIONS
DESCRIPTION
The
Epitaxial-Base NPN transistors in monolithic
Darlington
TO-220 plastic package. They are intented for
use in medium power linear and switching
applications.
The complementary PNP types are TIP115 and
TIP117.
ABSOLUTE MAXIMUM RATINGS
* For PNP types voltage and current values are negative
Symbol
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
V
V
V
T
P
I
CBO
CEO
EBO
I
CM
I
T
stg
C
B
tot
j
TIP110
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
configuration
and
TIP112
Parameter
mounted
T
case
amb
C
COMPLEMENTARY SILICON POWER
E
= 0)
are
= 0)
25
B
25
= 0)
in
o
o
C
C
silicon
Jedec
DARLINGTON TRANSISTORS
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ.= 7K
TIP110
TIP115
60
60
-65 to 150
Value
150
50
50
TO-220
5
2
4
2
TIP110/112
TIP115/117
R
TIP112
TIP117
2
1
100
100
Typ.= 230
2
3
Unit
mA
o
o
W
W
V
V
V
A
A
C
C
1/6
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TIP110 Summary of contents
Page 1
... For PNP types voltage and current values are negative COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS are silicon in Jedec NPN PNP = case amb TIP110/112 TIP115/117 TO-220 INTERNAL SCHEMATIC DIAGRAM R Typ Typ.= 230 1 2 Value TIP110 TIP112 TIP115 TIP117 60 100 60 100 -65 to 150 150 Unit 1/6 ...
Page 2
... DC Current Gain FE Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas 2 unless otherwise specified) case Test Conditions V = Half Rated V CE CEO V = Rated V CB CBO for TIP110/115 for TIP112/117 Derating Curve Max 2 ...
Page 3
... TIP110/TIP112/TIP115/TIP117 inch MIN. TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 ...