TIP122 STMicroelectronics, TIP122 Datasheet - Page 5
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TIP122
Manufacturer Part Number
TIP122
Description
TRANS NPN DARL 100V 5A TO-220
Manufacturer
STMicroelectronics
Type
Power, Switchr
Specifications of TIP122
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
4V @ 20mA, 5A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 3A, 3V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
5 A
Maximum Collector Cut-off Current
200 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Current, Gain
1000
Current, Input
0.12 A
Current, Output
5 A
Package Type
TO-220
Polarity
NPN
Power Dissipation
65 W
Resistance, Thermal, Junction To Ambient
62.5
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Input
5 V
Voltage, Output
100 V
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Collector-emitter Saturation Voltage
2V
Collector Current (dc) (max)
8A
Dc Current Gain
1000
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2543-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP122
Manufacturer:
ST
Quantity:
20 000
Part Number:
TIP122 TO-220
Manufacturer:
吉林华微
Quantity:
20 000
Company:
Part Number:
TIP122G
Manufacturer:
ON Semiconductor
Quantity:
253
TIP120, TIP121, TIP122, TIP125, TIP126, TIP127
2.1
Figure 2.
Figure 4.
Figure 6.
V
1000
CE(sat)
(V)
h
100
10
1.4
0.6
0.2
FE
0.01
0.1
1
Electrical characteristics (curves)
Safe operating area
DC current gain for NPN type
Collector-emitter saturation voltage
for NPN type
h
FE
= 250
0.1
V
CE
= 3 V
1
1
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
I c (A)
I c (A)
AM00696v1
AM00698v1
Figure 3.
Figure 5.
Figure 7.
V
CE(sat)
1000
(V)
100
h
-1.4
-0.6
-0.2
10
FE
-0.01
-1
-0.1
Derating curve
DC current gain for PNP type
Collector-emitter saturation voltage
for PNP type
h
FE
= 250
-0.1
V
CE
Electrical characteristics
= -3 V
-1
-1
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
I c (A)
I c (A)
AM00697v1
AM00699v1
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