MJD112T4 STMicroelectronics, MJD112T4 Datasheet - Page 8

• Manufacturer Part Number: MJD112T4
• Description: TRANS DARL NPN 100V 2A DPAK
• Manufacturer: STMicroelectronics

Specifications of MJD112T4

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 20W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 2 A
• Maximum Collector Cut-off Current: 20 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Base-emitter Saturation Voltage (max): 4V
• Collector-emitter Saturation Voltage: 2V
• Collector Current (dc) (max): 4A
• Dc Current Gain: 200
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2462-2

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TO-252 (DPAK) mechanical data
Doc ID 3540 Rev 3
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