PBSS5540Z,115 NXP Semiconductors, PBSS5540Z,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS5540Z,115
• Description: TRANS PNP 40V 5A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS5540Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 160mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 5A
• Dc Current Gain (min): 250
• Frequency (max): 120MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4172-2; 934055496115; PBSS5540Z T/R; PBSS5540Z T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2001 Sep 21
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
40 V low V
th j-a
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
CEsat
PARAMETER
PARAMETER
PNP transistor
open emitter
open base
open collector
T
T
in free air; note 1
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 2
3
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
92
−40
−40
−6
−5
−10
−2
1.35
2
+150
150
+150
PBSS5540Z
MAX.
Product data sheet
UNIT
K/W
V
V
V
A
A
A
W
W
°C
°C
°C
2
2
2
.
.
.
UNIT