PZT2222A,115 NXP Semiconductors, PZT2222A,115 Datasheet - Page 3

• Manufacturer Part Number: PZT2222A,115
• Description: TRANS NPN 60V 600MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of PZT2222A,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1.15W
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 35
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 600 mA
• Maximum Dc Collector Current: 800 mA
• Power Dissipation: 1.15 W
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4879-2; 933975330115; PZT2222A T/R; PZT2222A T/R; PZT2222A,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 14
R
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th j-a
th j-s
c
e
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
T
I
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
Con
Boff
amb
= 0; V
= 0; V
= i
= 0; V
= 0.1 mA; V
= 1 mA; V
= 10 mA; V
= 10 mA; V
= 150 mA; V
= 150 mA; V
= 500 mA; V
= 150 mA; I
= 500 mA; I
= 150 mA; I
= 500 mA; I
= i
= 20 mA; V
= −15 mA; T
= 150 mA; I
e
c
= −55 °C
= 0; V
= 0; V
3
CB
CB
EB
= 60 V
= 60 V; T
= 5 V
CONDITIONS
CE
CB
EB
CE
CE
CE
B
B
B
B
CE
CE
CE
CE
= 10 V; f = 1 MHz
= 500 mV; f = 1 MHz
= 10 V
= 15 mA
= 50 mA
= 15 mA
= 50 mA
Bon
amb
= 10 V
= 10 V;
= 20 V; f = 100 MHz 300
= 10 V
= 1 V; note 1
= 10 V; note 1
= 10 V; note 1
note 1
= 15 mA;
amb
= 25 °C
CONDITIONS
= 125 °C
−
−
−
35
50
75
35
50
100
40
−
−
0.6
−
−
−
−
−
−
−
−
−
MIN.
VALUE
109
28
Product data sheet
PZT2222A
10
10
10
−
−
−
−
−
300
−
300
1
1.2
2
8
25
−
35
10
25
250
200
60
MAX.
UNIT
K/W
K/W
2
nA
µA
nA
mV
V
V
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
.
UNIT