PMST4403,115 NXP Semiconductors, PMST4403,115 Datasheet

TRANS PNP 40V 600MA SOT323

PMST4403,115

Manufacturer Part Number
PMST4403,115
Description
TRANS PNP 40V 600MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMST4403,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
200mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
200 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-5036-2
934026890115
PMST4403 T/R
PMST4403 T/R
PMST4403,115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMST4403,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1997 May 29
book, halfpage
DATA SHEET
PMST4403
PNP switching transistor
DISCRETE SEMICONDUCTORS
M3D187
1999 Apr 22

Related parts for PMST4403,115

PMST4403,115 Summary of contents

Page 1

DATA SHEET book, halfpage PMST4403 PNP switching transistor Product data sheet Supersedes data of 1997 May 29 DISCRETE SEMICONDUCTORS M3D187 1999 Apr 22 ...

Page 2

... NXP Semiconductors PNP switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT323 plastic package. NPN complement: PMST4401. MARKING TYPE NUMBER PMST4403 Note 1. ∗ Made in Hong Kong. ...

Page 3

... NXP Semiconductors PNP switching transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE DC current gain ...

Page 4

... NXP Semiconductors PNP switching transistor 300 handbook, full pagewidth h FE 200 100 0 −1 −10 handbook, full pagewidth = −9 500 µ µ Ω 325 Ω 325 Ω −29 3 Ω. Oscilloscope input impedance Z i 1999 Apr 22 −1 −10 Fig.2 DC current gain; typical values. ...

Page 5

... NXP Semiconductors PNP switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 1999 Apr scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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