DSS4540X-13 Diodes Inc, DSS4540X-13 Datasheet - Page 2
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DSS4540X-13
Manufacturer Part Number
DSS4540X-13
Description
TRANS BIPO NPN 40V 4A SOT89-3
Manufacturer
Diodes Inc
Datasheet
1.DSS4540X-13.pdf
(4 pages)
Specifications of DSS4540X-13
Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
355mV @ 500mA, 5A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V
Power - Max
900mW
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
4 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Maximum Operating Frequency
70 MHz
Minimum Operating Temperature
- 55 C
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
900mW
Dc Collector Current
500mA
Dc Current Gain Hfe
300
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DSS4540XDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cut-Off Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Collector Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS4540X
Document number: DS31592 Rev. 2 - 2
2.0
1.6
1.2
0.8
0.4
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
25
T , AMBIENT TEMPERATURE ( C)
Characteristic
A
50
Note 4
75
@T
A
100
= 25°C unless otherwise specified
Note 5
°
125
V
V
V
V
R
Symbol
V
V
150
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
I
I
I
h
CBO
EBO
CES
www.diodes.com
C
t
t
f
t
on
t
off
t
FE
t
T
d
s
r
f
c
2 of 4
Min
300
300
250
100
40
40
70
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Typ
160
185
135
670
570
100
80
37
60
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Max
100
100
100
120
150
290
355
1.1
1.2
1.1
50
90
71
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
MHz
Unit
I = 2mA
mV
mΩ
I = 10mA
I = 6mA
I = 4mA
B
nA
μA
nA
nA
I = 8mA
pF
ns
ns
ns
ns
ns
ns
⎯
B
B
B
B
V
V
V
V
V
2
I
I
I
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
V
f = 100MHz
V
f = 1MHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
B1
B1
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CB
CC
CC
= 100μA
= 10mA
= 100μA
= 0.5A, I
= 1A, I
= 2A, I
= 4A, I
= 5A, I
= 5A, I
= 4A, I
= 5A, I
= 40mA
= I
= 30V, I
= 30V, I
= 30V, V
= 5V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
3
B2
Test Conditions
= 40mA
B
B
B
B
B
B
B
= 10mA
= 200mA
= 200mA
= 500mA
= 500mA
= 200mA
= 500mA
C
C
C
C
C
B
C
E
E
C
E
C
C
= 5mA
= 0
= 0.5A
= 1A
= 2A
= 5A
= 2A
BE
= 0
= 0, T
= 0A,
= 2A,
= 0.1A,
= 2A,
DSS4540X
4
= 0V
© Diodes Incorporated
December 2008
A
= 150°C
5