MMDT3946-7-F Diodes Zetex, MMDT3946-7-F Datasheet - Page 3

• Manufacturer Part Number: MMDT3946-7-F
• Description: Trans GP BJT NPN/PNP 40V 0.2A 6-Pin SOT-363 T/R
• Manufacturer: Diodes Zetex
• Type: NPN|PNPr

Specifications of MMDT3946-7-F

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 40@100uA@1V@NPN|70@1mA@1V@NPN|100@10mA@1V@NPN|60@50mA@1V@NPN|30@100mA@1V@NPN|60@100uA@1V@PNP|80@1mA@1V@PNP|100@10mA@1V@PNP|60@50mA@1V@PNP|30@100mA@1V@PNP
• Maximum Operating Frequency: 300(Min)@NPN|250(Min)@PNP MHz
• Maximum Dc Collector Current: 0.2 A
• Maximum Base Emitter Saturation Voltage: 0.85@1mA@10mA|0.95@5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.2@1mA@10mA@NPN|0.3@5mA@50mA@NPN|0.25@1mA@10mA@PNP|0.4@5mA@50mA@PNP V
• Maximum Collector Base Voltage: 60@NPN|40@PNP V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 6@NPN|5@PNP V
• Transistor Polarity: NPN/PNP
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60/40V
• Emitter-base Voltage: 6/5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 100
• Power Dissipation: 200mW
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-363
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics, PNP 3906 Section
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
DS30123 Rev. 10 - 2
300
250
200
150
350
100
50
0
0
25
T , AMBIENT TEMPERATURE (°C)
Ambient Temperature (Total Device)
Fig. 1, Max Power Dissipation vs.
A
50
Characteristic
75
100 125
150
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
h
CEX
h
NF
I
h
h
3 of 5
BL
f
t
t
obo
t
t
FE
ibo
oe
T
d
ie
re
fe
s
r
f
@T
A
= 25°C unless otherwise specified
-0.65
Min
-5.0
100
100
250
-40
-40
2.0
0.1
3.0
60
80
60
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
15
10
5
0
0.1
-0.25
-0.40
-0.85
-0.95
Max
300
400
225
-50
-50
4.5
4.0
10
12
10
60
35
35
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
CB
Collector-Base Voltage (NPN-3904)
x 10
MHz
Unit
nA
nA
kΩ
μS
dB
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
1
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
= -10μA, I
= -10mA, I
= -10μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -50mA, V
= -100mA, V
= -50mA, I
= -10mA, I
= -50mA, I
= 1.0kΩ, f = 1.0kHz
= I
= -30V, V
= -30V, V
= 10V, I
= -5.0V, I
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -20V, I
= -3.0V, I
= -3.0V, I
B2
= 0.5V, I
= -1.0mA
Test Condition
10
C
E
C
B
B
B
B
C
B
C
C
C
EB(OFF)
EB(OFF)
= 0
= 0
= 1.0mA,
CE
= -1.0mA
= -5.0mA
= -1.0mA
= -5.0mA
= -10mA,
CE
CE
CE
CE
= 0
= -100μA,
= -10mA,
= -10mA,
B1
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= -1.0mA
= -3.0V
= -3.0V
© Diodes Incorporated
E
C
MMDT3946
100
= 0
= 0