MMDT3946-7-F Diodes Zetex, MMDT3946-7-F Datasheet - Page 2

• Manufacturer Part Number: MMDT3946-7-F
• Description: Trans GP BJT NPN/PNP 40V 0.2A 6-Pin SOT-363 T/R
• Manufacturer: Diodes Zetex
• Type: NPN|PNPr

Specifications of MMDT3946-7-F

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 40@100uA@1V@NPN|70@1mA@1V@NPN|100@10mA@1V@NPN|60@50mA@1V@NPN|30@100mA@1V@NPN|60@100uA@1V@PNP|80@1mA@1V@PNP|100@10mA@1V@PNP|60@50mA@1V@PNP|30@100mA@1V@PNP
• Maximum Operating Frequency: 300(Min)@NPN|250(Min)@PNP MHz
• Maximum Dc Collector Current: 0.2 A
• Maximum Base Emitter Saturation Voltage: 0.85@1mA@10mA|0.95@5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.2@1mA@10mA@NPN|0.3@5mA@50mA@NPN|0.25@1mA@10mA@PNP|0.4@5mA@50mA@PNP V
• Maximum Collector Base Voltage: 60@NPN|40@PNP V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 6@NPN|5@PNP V
• Transistor Polarity: NPN/PNP
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60/40V
• Emitter-base Voltage: 6/5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 100
• Power Dissipation: 200mW
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-363
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics, NPN 3904 Section
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30123 Rev. 10 - 2
6. Short duration pulse test used to minimize self-heating effect.
Characteristic
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V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
h
CEX
h
NF
I
h
h
2 of 5
BL
f
t
t
obo
t
t
FE
ibo
oe
T
d
ie
re
fe
s
r
f
@T
A
= 25°C unless otherwise specified
0.65
Min
100
100
300
5.0
1.0
0.5
1.0
60
40
40
70
60
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.20
0.30
0.85
0.95
300
400
200
6.0
4.0
8.0
8.0
5.0
50
50
10
40
35
35
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
x 10
MHz
Unit
nA
nA
kΩ
μS
dB
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
= 10μA, I
= 10mA, I
= 10μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 50mA, V
= 100mA, V
= 50mA, I
= 10mA, I
= 50mA, I
= 1.0kΩ, f = 1.0kHz
= I
= 30V, V
= 30V, V
= 10V, I
= 5.0V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
= 3.0V, I
= 3.0V, I
B2
= - 0.5V, I
= 1.0mA
Test Condition
C
E
B
B
B
B
C
C
B
C
EB(OFF)
EB(OFF)
C
C
= 0
= 0
CE
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA,
= 20mA,
CE
CE
CE
CE
= 0
= 100μA,
= 10mA,
= 10mA,
= 1.0V
= 1.0V
= 1.0V
B1
= 1.0V
= 1.0V
= 1.0mA
= 3.0V
= 3.0V
© Diodes Incorporated
C
E
MMDT3946
= 0
= 0