EMC2DXV5T1 ON Semiconductor, EMC2DXV5T1 Datasheet - Page 5

• Manufacturer Part Number: EMC2DXV5T1
• Description: TRANS BR NPN/PNP DUAL 50V SOT553
• Manufacturer: ON Semiconductor

Specifications of EMC2DXV5T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: EMC2DXV5T1OS; EMC2DXV5T1OS; EMC2DXV5T1OSTR

0.001
4
3
2
1
0
0.01
0.1
0
1
0
I
C
/I
B
= 10
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR
10
Figure 9. Output Capacitance
Figure 7. V
V
20
R
I
, REVERSE BIAS VOLTAGE (V)
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
0.1
10
1
0
30
V
versus I
O
= 0.2 V
Figure 11. Input Voltage versus Output
T
A
40
= -25°C
10
C
f = 1 MHz
I
T
E
40
A
= 0 mA
= 25°C
I
75°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
20
50
Current
50
T
A
= -25°C
5
0.001
1000
75°C
30
0.01
100
100
0.1
10
10
1
1
0
Figure 10. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 8. DC Current Gain
25°C
I
T
C
A
, COLLECTOR CURRENT (mA)
3
= -25°C
V
50
in
, INPUT VOLTAGE (V)
4
10
5
6
7
T
8
V
A
CE
= 75°C
V
O
= 10 V
-25°C
= 5 V
9
25°C
100
10