EMC2DXV5T1 ON Semiconductor, EMC2DXV5T1 Datasheet - Page 10

• Manufacturer Part Number: EMC2DXV5T1
• Description: TRANS BR NPN/PNP DUAL 50V SOT553
• Manufacturer: ON Semiconductor

Specifications of EMC2DXV5T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: EMC2DXV5T1OS; EMC2DXV5T1OS; EMC2DXV5T1OSTR

0.01
0.8
0.6
0.2
0.1
0.4
10
1
0
1
TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR
0
0
I
C
/I
B
= 10
10
Figure 34. Output Capacitance
Figure 32. V
V
I
C
R
, COLLECTOR CURRENT (mA)
, REVERSE BIAS VOLTAGE (V)
20
20
CE(sat)
100
0.1
10
1
T
A
0
Figure 36. Input Voltage versus Output Current
30
= -25°C
versus I
V
O
= 0.2 V
10
C
40
f = 1 MHz
I
T
E
40
A
= 0 mA
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
20
50
50
10
T
0.001
A
30
1000
0.01
100
100
= -25°C
0.1
10
10
1
1
0
Figure 35. Output Current versus Input Voltage
40
75°C
25°C
75°C
2
Figure 33. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
50
V
in
, INPUT VOLTAGE (V)
25°C
4
10
T
A
= -25°C
6
V
O
= 5 V
T
A
V
8
= 75°C
CE
= 10 V
25°C
-25°C
100
10