BCR 22PN H6727 Infineon Technologies, BCR 22PN H6727 Datasheet - Page 2

• Manufacturer Part Number: BCR 22PN H6727
• Description: TRANS NPN/PNP DGTL 50V SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 22PN H6727

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

Electrical Characteristics at T
Parameter
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector cutoff current
V
Emitter cutoff current
V
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Input off voltage
I
Input on Voltage
I
Input resistor
Resistor ratio
AC Characteristics for NPN and PNP Types
Transition frequency
I
Collector-base capacitance
V
1) Pulse test: t < 300 s; D < 2%
C
C
C
C
C
C
C
CB
EB
CB
= 10 mA, V
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 V, I
= 10 V, f = 1 MHz
= 40 V, I
E
CE
CE
B
E
C
B
CE
= 0
CE
= 0.5 mA
= 0
= 0
= 0
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
= 5 V
A
=25°C, unless otherwise specified
2
Symbol
V
V
I
I
h
V
V
V
R
R
f
C
T
CBO
EBO
FE
cb
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
1
1
/R
2
min.
0.8
0.9
50
50
50
15
1
-
-
-
-
-
Values
typ.
130
22
3
1
-
-
-
-
-
-
-
-
max.
100
350
0.3
1.5
2.5
1.1
29
BCR22PN
2007-07-31
-
-
-
-
-
MHz
pF
Unit
V
nA
µA
-
V
k
-