BCR 22PN H6727 Infineon Technologies, BCR 22PN H6727 Datasheet

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BCR 22PN H6727

Manufacturer Part Number
BCR 22PN H6727
Description
TRANS NPN/PNP DGTL 50V SOT363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 22PN H6727

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
130MHz
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
 Details
NPN/PNP Silicon Digital Transistor Array
Type
BCR22PN
Maximum Ratings for NPN and PNP Types
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
DC collector current
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1 Pb-containing package may be available upon special request
2 For calculation of R
Tape loading orientation
Switching circuit, inverter, interface circuit,
Two (galvanic) internal isolated NPN/PNP
Built in bias resistor NPN and PNP
Pb-free (RoHS compliant) package
Qualified according AEC Q101
driver circuit
Transistors in one package
(R
Direction of Unreeling
1
=22 k , R
Top View
6
1 2 3
W1s
5
4
2
=22 k )
thJA
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
please refer to Application Note Thermal Resistance
Marking
WPs
2)
S
= 115 °C
EHA07193
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1)
Pin Configuration
1
Symbol
V
V
V
V
I
P
T
T
R
C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
thJS
-65 ... 150
6
5
4
Value
100
250
150
50
50
60
10
TR1
140
C1
E1
6
1
R
Package
R
2
1
B2
B1
5
2
R
R
1
2
BCR22PN
2007-07-31
E2
C2
EHA07176
4
3
TR2
1
2
3
Unit
V
mA
mW
°C
K/W

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BCR 22PN H6727 Summary of contents

Page 1

NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP ( Pb-free (RoHS ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics for NPN and PNP Types Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector cutoff current V ...

Page 3

NPN Type DC Current Gain (common emitter configuration -40 °C -25 °C 25 °C 85 °C 125 ° Input ...

Page 4

PNP Type DC Current Gain (common emitter configuration -40 ° -25 °C 25 °C 85 °C 125 ° Input ...

Page 5

Total power dissipation P 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load K 0.5 0.2 0.1 0.05 0.02 0 ...

Page 6

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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