MUN5211DW1T1G ON Semiconductor, MUN5211DW1T1G Datasheet - Page 17

• Manufacturer Part Number: MUN5211DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5211DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rf Transistor Case: SOT-363
• No. Of Pins: 6
• Rohs Compliant: Yes
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MUN5211DW1T1GOSTR

0.001
4.5
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
5
I
C
/I
V
B
R
10
Figure 59. Output Capacitance
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 57. V
15
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1G
−25°C
20
20
25
0.1
CE(sat)
10
1
0
Figure 61. Input Voltage versus Output Current
25°C
30
30
versus I
35
75°C
10
I
f = 1 MHz
I
T
C
E
40
A
, COLLECTOR CURRENT (mA)
C
= 0 V
40
= 25°C
25°C
http://onsemi.com
45
20
50
50
T
17
A
= −25°C
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
75°C
Figure 60. Output Current versus Input Voltage
25°C
V
1
O
T
A
= 0.2 V
40
= −25°C
2
75°C
Figure 58. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
4
T
A
= −25°C
5
10
75°C
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10