MUN5211 ON Semiconductor, MUN5211 Datasheet

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MUN5211

Manufacturer Part Number
MUN5211
Description
Dual Bias Resistor Transistors
Manufacturer
ON Semiconductor
Datasheet

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0
MUN5211T1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC-70/SOT-323 package which is designed for low power
surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0 x 1.0 inch Pad.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 8
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Range
This new series of digital transistors is designed to replace a single
The modified gull-winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
to order the 7 inch/3000 unit reel.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-70/SOT-323 package can be soldered using wave or reflow.
Available in 8 mm embossed tape and reel. Use the Device Number
Pb-Free Packages are Available
T
A
Characteristic
= 25°C
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
CBO
CEO
, T
I
qJA
qJL
C
D
stg
202 (Note 1)
310 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
-55 to +150
Value
Max
100
50
50
1
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(INPUT)
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
upon manufacturing location.
DEVICE MARKING INFORMATION
BASE
PIN 1
1
ORDERING INFORMATION
2
BIAS RESISTOR
8x
M
G
MARKING DIAGRAM
TRANSISTORS
http://onsemi.com
NPN SILICON
3
R
R
= Device Code
= Date Code*
= Pb-Free Package
2
1
8x M G
Publication Order Number:
SC-70/SOT-323
G
CASE 419
STYLE 3
PIN 2
EMITTER
(GROUND)
PIN 3
COLLECTOR
(OUTPUT)
MUN5211T1/D

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MUN5211 Summary of contents

Page 1

... MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... SC-70/SOT-323 MUN5237T1G (Note 3) SC-70/SOT-323 (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. MUN5211T1 Series Marking R1 ( ...

Page 3

... MUN5237T1 (BR)CBO V (BR)CEO MUN5211T1 MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5215T1, G MUN5216T1, G MUN5230T1, G MUN5231T1, G MUN5232T1, G MUN5233T1, G MUN5234T1, G MUN5235T1, G MUN5236T1, G MUN5237T1 CE(sat) MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5236T1, G MUN5230T1, G MUN5231T1, G MUN5237T1, G MUN5215T1, G MUN5216T1, G MUN5232T1, G MUN5233T1, G MUN5234T1, G MUN5235T1, G http://onsemi.com 3 Min Typ Max - - 100 nAdc ...

Page 4

... MUN5232T1, G MUN5233T1, G MUN5236T1, G MUN5237T1 MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5215T1, G MUN5216T1, G MUN5230T1, G MUN5231T1, G MUN5232T1, G MUN5233T1, G MUN5234T1, G MUN5235T1, G MUN5236T1, G MUN5237T1 MUN5211T1, G MUN5212T1, G MUN5213T1, G MUN5214T1, G MUN5215T1, G MUN5216T1, G MUN5230T1, G MUN5231T1, G MUN5232T1, G MUN5233T1, G MUN5234T1, G MUN5235T1, G MUN5236T1, G MUN5237T1, G http://onsemi.com 4 Min Typ Max - - 0 ...

Page 5

... MUN5211T1 Series 350 300 250 200 150 100 R = 403°C/W 50 qJA AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 5 100 150 ...

Page 6

... TYPICAL ELECTRICAL CHARACTERISTICS - MUN5211T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 4. Output Capacitance 0 0.1 0 Figure 6. Input Voltage versus Output Current MUN5211T1 Series 1000 T = -25°C A 25° ...

Page 7

... Figure 7. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 9. Output Capacitance 100 0.1 0 Figure 11. Input Voltage versus Output Current MUN5211T1 Series 1000 25°C 75°C 100 100 MHz 25° 0.1 0.01 0.001 40 ...

Page 8

... Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 14. Output Capacitance 100 0.1 0 Figure 16. Input Voltage versus Output Current MUN5211T1 Series 1000 25°C 100 75° 100 MHz 25° 0.1 0.01 0.001 Figure 15 ...

Page 9

... V , REVERSE BIAS VOLTAGE (VOLTS) R Figure 19. Output Capacitance 0.1 0 Figure 21. Input Voltage versus Output Current MUN5211T1 Series 300 -25°C 250 A 25°C 200 75°C 150 100 100 MHz T = 75° ...

Page 10

... V , REVERSE BIAS VOLTAGE (VOLTS) R Figure 24. Output Capacitance 75°C 0.1 0 Figure 26. Input Voltage versus Output Current MUN5211T1 Series 1000 T = -25°C 75°C A 100 100 75° MHz 25° ...

Page 11

... I CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 29. Output Capacitance 10 1 0.1 0 Figure 31. Input Voltage versus Output Current MUN5211T1 Series 100 75° 100 75° MHz 25° 0.1 0.01 0.001 ...

Page 12

... V , REVERSE BIAS VOLTAGE (VOLTS) R Figure 34. Output Capacitance 75°C 0.1 0 Figure 36. Input Voltage versus Output Current MUN5211T1 Series 1000 100 100 MHz 75° 25° 0.1 0.01 0.001 35 40 ...

Page 13

... CE(sat) 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 39. Output Capacitance 10 1 75°C 0.1 0 Figure 41. Input Voltage versus Output Current MUN5211T1 Series 1000 100 75° 100 75° MHz 25° -25°C A 0.1 0.01 ...

Page 14

... CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 44. Output Capacitance 10 1 0.1 0 Figure 46. Input Voltage versus Output Current MUN5211T1 Series 1000 75°C 100 100 25° MHz 25° -25°C A 0.1 0.01 0.001 ...

Page 15

... MUN5211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 47. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 48. Open Collector Inverter: Inverts the Input Signal Figure 49. Inexpensive, Unregulated Current Source http://onsemi.com 15 ISOLATED LOAD +12 V LOAD ...

Page 16

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com MUN5211T1 Series PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE ...

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