NSTB60BDW1T1G ON Semiconductor, NSTB60BDW1T1G Datasheet - Page 30
![TRANS BRT PNP/NPN 50V GP SC88](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
NSTB60BDW1T1G
Manufacturer Part Number
NSTB60BDW1T1G
Description
TRANS BRT PNP/NPN 50V GP SC88
Manufacturer
ON Semiconductor
Datasheet
1.NSTB60BDW1T1G.pdf
(8 pages)
Specifications of NSTB60BDW1T1G
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V / 120 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
140MHz
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Base Input Resistor R1
22kohm
Resistor Ratio, R1 / R2
2.13
Rf Transistor Case
SOT-363
C-e Breakdown Voltage
50V
Current Rating
-150/150mA
Drain-source Breakdown Voltage
50V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NSTB60BDW1T1GOS
NSTB60BDW1T1GOS
NSTB60BDW1T1GOSTR
NSTB60BDW1T1GOS
NSTB60BDW1T1GOSTR
Final Product/Process Change Notification #16266
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SZBZX84C5V6LT3G
SZBZX84C62ET1
SZBZX84C62ET1G
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SZBZX84C6V8ET1G
SZBZX84C6V8LT1
SZBZX84C6V8LT1G
SZBZX84C6V8LT3
SZBZX84C6V8LT3G
SZBZX84C75ET1G
SZBZX84C75ET3
SZBZX84C75LT1
SZBZX84C75LT1G
SZBZX84C75LT3
SZBZX84C7V5ET1G
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SZBZX84C7V5LT3G
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SZBZX84C8V2ET3G
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SZBZX84C9V1LT1
SZBZX84C9V1LT1G
SZBZX84C9V1LT3
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SZMM3Z2V4T1G
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 30 of 36