NSTB60BDW1T1G ON Semiconductor, NSTB60BDW1T1G Datasheet - Page 26
![TRANS BRT PNP/NPN 50V GP SC88](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
NSTB60BDW1T1G
Manufacturer Part Number
NSTB60BDW1T1G
Description
TRANS BRT PNP/NPN 50V GP SC88
Manufacturer
ON Semiconductor
Datasheet
1.NSTB60BDW1T1G.pdf
(8 pages)
Specifications of NSTB60BDW1T1G
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V / 120 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
140MHz
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Base Input Resistor R1
22kohm
Resistor Ratio, R1 / R2
2.13
Rf Transistor Case
SOT-363
C-e Breakdown Voltage
50V
Current Rating
-150/150mA
Drain-source Breakdown Voltage
50V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NSTB60BDW1T1GOS
NSTB60BDW1T1GOS
NSTB60BDW1T1GOSTR
NSTB60BDW1T1GOS
NSTB60BDW1T1GOSTR
Final Product/Process Change Notification #16266
SMBZ2606-7LT3G
SMBZ2606-8LT3
SMBZ2606-8LT3G
SMF05T1G
SMF05T2G
SMM3Z5V1RT1G
SMMBD301LT1
SMMBD301LT1G
SMMSD4148T1G
SMSD1002T1
SMSD1002T1G
SMSZ1000T1G
SMSZ1002T1G
SMSZ1006T1
SMSZ1006T1G
SMSZ1007T1
SMSZ1007T1G
SMSZ1009T1
SMSZ1009T1G
SMSZ1010T1G
SMSZ1013T1
SMSZ1013T1G
SMSZ1018T1
SMSZ1018T1G
SMSZ1019T1G
SMSZ1022T1
SMSZ1022T1G
SMSZ1023T1G
SMSZ1024T1G
SMSZ1025T1
SMSZ1025T1G
SMSZ1600-15T1
SMSZ1600-15T1DS
SMSZ1600-17T1G
SMSZ1600-18T3DS
SMSZ1600-18T3DSG
SMSZ1600-19T3DS
SMSZ1600-20T3
SMSZ1600-20T3DS
SMSZ1600-20T3DSG
SMSZ1600-20T3G
SMSZ1600-23T3
SMSZ1600-23T3DS
SMSZ1600-23T3DSG
SMSZ1600-31T3
SMSZ1600-31T3DS
SMSZ1600-31T3DSG
SMSZ1600-31T3G
SMSZ1600-35T3
SMSZ1600-35T3DS
SMSZ1600-35T3DSG
SMSZ1600-35T3G
SMSZ1603T3DS
SMSZ1603T3G
SMSZ1604-T3DS
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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