MUN5235DW1T1G ON Semiconductor, MUN5235DW1T1G Datasheet - Page 9

• Manufacturer Part Number: MUN5235DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5235DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: MUN5235DW1T1G; MUN5235DW1T1GOSTR

0.001
0.01
3.5
2.5
1.5
0.5
0.1
4
3
2
1
0
1
0
0
I
2
C
/I
B
= 10
4
Figure 19. Output Capacitance
Figure 17. V
V
6
R
20
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
8
TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5214T1G
10
15 20
CE(sat)
0.1
40
10
1
0
Figure 21. Input Voltage versus Output Current
versus I
25 30
V
O
= 0.2 V
T
A
10
= --25C
60
f = 1 MHz
l
T
E
35 40
A
C
= 0 V
= 25C
75C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25C
45 50
20
80
9
T
A
= --25C
100
30
300
250
200
150
100
10
50
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
CE
T
2
A
= 75C
= 10
40
4
25C
2
6
Figure 18. DC Current Gain
75C
I
C
8
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
10
4
15 20 40 50 60 70 80 90
--25C
6
--25C
25C
T
A
V
= 75C
25C
O
8
= 5 V
100
10