MUN5235DW1T1G ON Semiconductor, MUN5235DW1T1G Datasheet - Page 11

• Manufacturer Part Number: MUN5235DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5235DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: MUN5235DW1T1G; MUN5235DW1T1GOSTR

0.001
4.5
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
I
C
5
/I
B
V
= 10
R
10
Figure 29. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 27. V
15
, COLLECTOR CURRENT (mA)
--25C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230T1G
20
20
25
0.1
CE(sat)
10
1
25C
0
Figure 31. Input Voltage versus Output Current
30
30
versus I
T
35
A
75C
= --25C
f = 1 MHz
I
T
10
E
I
A
C
40
75C
= 0 V
, COLLECTOR CURRENT (mA)
= 25C
C
40
http://onsemi.com
45
25C
20
50
50
11
0.001
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 30. Output Current versus Input Voltage
75C
V
O
1
= 0.2 V
40
T
A
2
= --25C
Figure 28. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
25C
, INPUT VOLTAGE (VOLTS)
3
T
75C
50
A
= --25C
4
5
10
25C
6
7
V
O
V
= 5 V
8
CE
= 10 V
9
100
10