MUN5330DW1T1G ON Semiconductor, MUN5330DW1T1G Datasheet - Page 5

• Manufacturer Part Number: MUN5330DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5330DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 1kohm
• Base-emitter Resistor R2: 1kohm
• Resistor Ratio, R1 / R2: 1
• Rf Transistor Case: SC-88
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
(T
ON CHARACTERISTICS (Note 4)
Resistor Ratio MUN5311DW1T1G/MUN5312DW1T1G/MUN5313DW1T1G
Input Resistor
A
= 25°C unless otherwise noted, common for Q
MUN5314DW1T1G
MUN5315DW1T1G/MUN5316DW1T1G
MUN5330DW1T1G/MUN5331DW1T1G/MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
Characteristic
300
250
200
150
100
50
0
−50
ALL MUN5311DW1T1G SERIES DEVICES
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
1
T
A
and Q
, AMBIENT TEMPERATURE (°C)
0
Figure 1. Derating Curve
R
http://onsemi.com
2
qJA
, − minus sign for Q
= 490°C/W
50
5
1
(PNP) omitted) (Continued)
100
Symbol
R1/R2
R1
0.055
0.038
150
15.4
32.9
15.4
1.54
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
−
0.047
0.21
0.47
Typ
4.7
1.0
2.2
4.7
4.7
2.2
1.0
1.0
0.1
10
22
47
10
10
22
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
0.25
0.56
6.1
1.3
2.9
6.1
6.1
1.2
1.2
13
13
13
−
Unit
k W