MUN5330DW1T1G ON Semiconductor, MUN5330DW1T1G Datasheet - Page 4

• Manufacturer Part Number: MUN5330DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5330DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 1kohm
• Base-emitter Resistor R2: 1kohm
• Resistor Ratio, R1 / R2: 1
• Rf Transistor Case: SC-88
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

ELECTRICAL CHARACTERISTICS
(T
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
DC Current Gain
A
(V
(I
(I
(I
(V
(V
(V
(V
(V
= 25°C unless otherwise noted, common for Q
C
C
C
CE
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
B
B
B
B
= 5.0 mA)
= 0.3 mA)
B
B
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 0.5 V, R
= 0.050 V, R
= 0.25 V, R
L
L
L
Characteristic
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
L
= 1.0 kW)
= 1.0 kW)
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5335DW1T1G
MUN5330DW1T1G
MUN5331DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5311DW1T1G
MUN5312DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
MUN5313DW1T1G
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
MUN5330DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G
1
and Q
http://onsemi.com
2
, − minus sign for Q
4
1
(PNP) omitted) (Continued)
Symbol
V
CE(sat)
V
V
h
OH
FE
OL
Min
160
160
3.0
8.0
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
35
60
80
80
15
80
80
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
140
140
350
350
200
150
140
5.0
60
15
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Vdc
Vdc
Vdc